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Rapid thermal anneal. Rapid thermal anneal (RTA) in rapid thermal processing is a process used in semiconductor device fabrication which involves heating a single wafer at a time in order to affect its electrical properties. Unique heat treatments are designed for different effects. Wafers can be heated in order to activate dopants, change film ...
Increasingly, furnace anneals are being supplanted by Rapid Thermal Anneal (RTA) or Rapid Thermal Processing (RTP). This is due to the relatively long thermal cycles of furnaces that causes the dopants that are being activated, especially boron, to diffuse farther than is intended.
Doping processes with ion implantation are followed by furnace annealing [156] [38] or, in advanced devices, by rapid thermal annealing (RTA) to activate the dopants. Annealing was initially done at 500 to 700°C, but this was later increased to 900 to 1100°C.
The five key points to the design are: (i) an intrinsic tunneling barrier, (ii) delta-doped injectors, (iii) offset of the delta-doping planes from the heterojunction interfaces, (iv) low temperature molecular beam epitaxial growth (LTMBE), and (v) postgrowth rapid thermal annealing (RTA) for activation of dopants and reduction of density of ...
Process annealing, also called intermediate annealing, subcritical annealing, or in-process annealing, is a heat treatment cycle that restores some of the ductility to a product being cold-worked so it can be cold-worked further without breaking. The temperature range for process annealing ranges from 260 °C (500 °F) to 760 °C (1400 °F ...
Dopant activation is the process of obtaining the desired electronic contribution from impurity species in a semiconductor host. [1] The term is often restricted to the application of thermal energy following the ion implantation of dopants. In the most common industrial example, rapid thermal processing is applied to silicon following the ion ...