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  2. Bipolar junction transistor - Wikipedia

    en.wikipedia.org/wiki/Bipolar_junction_transistor

    Ebers–Moll model for an NPN transistor. [28] I B, I C and I E are the base, collector and emitter currents; I CD and I ED are the collector and emitter diode currents; α F and α R are the forward and reverse common-base current gains. Ebers–Moll model for a PNP transistor Approximated Ebers–Moll model for an NPN transistor in the ...

  3. Darlington transistor - Wikipedia

    en.wikipedia.org/wiki/Darlington_transistor

    Darlington Transistor (NPN-type) In electronics, a Darlington configuration (commonly called as a Darlington pair) is a circuit consisting of two bipolar transistors with the emitter of one transistor connected to the base of the other, such that the current amplified by the first transistor is amplified further by the second one. [1]

  4. Transistor - Wikipedia

    en.wikipedia.org/wiki/Transistor

    The bipolar junction transistor, the first type of transistor to be mass-produced, is a combination of two junction diodes and is formed of either a thin layer of p-type semiconductor sandwiched between two n-type semiconductors (an n–p–n transistor), or a thin layer of n-type semiconductor sandwiched between two p-type semiconductors (a p ...

  5. Common collector - Wikipedia

    en.wikipedia.org/wiki/Common_collector

    The circuit can be explained by viewing the transistor as being under the control of negative feedback. From this viewpoint, a common-collector stage (Fig. 1) is an amplifier with full series negative feedback. In this configuration (Fig. 2 with β = 1), the entire output voltage V out is placed contrary and in series with the input voltage V in.

  6. ggNMOS - Wikipedia

    en.wikipedia.org/wiki/GgNMOS

    A parasitic NPN bipolar junction transistor (BJT) is thus formed with the drain acting as the collector, the base/source combination (n-type) as the emitter, and the substrate as the base. As is explained below, a key element to the operation of the ggNMOS is the parasitic resistance present between the emitter and base terminals of the ...

  7. Insulated-gate bipolar transistor - Wikipedia

    en.wikipedia.org/wiki/Insulated-gate_bipolar...

    [8] [11] [12] In 1957 Frosch and Derick published their work on building the first silicon dioxide transistors, including a NPNP transistor, the same structure as the IGBT. [13] The basic IGBT mode of operation, where a pnp transistor is driven by a MOSFET, was first proposed by K. Yamagami and Y. Akagiri of Mitsubishi Electric in the Japanese ...

  8. 2N2222 - Wikipedia

    en.wikipedia.org/wiki/2N2222

    The 2N2222 is considered a very common transistor, [1] [2] [3] and is used as an exemplar of an NPN transistor. It is frequently used as a small-signal transistor, [4] [5] and it remains a small general purpose transistor [6] of enduring popularity. [7] [8] [9] The 2N2222 was part of a family of devices described by Motorola at a 1962 IRE ...

  9. Open collector - Wikipedia

    en.wikipedia.org/wiki/Open_collector

    The NPN BJT (n-type bipolar junction transistor) and nMOS (n-type metal oxide semiconductor field effect transistor) have greater conductance than their PNP and pMOS relatives, so may be more commonly used for these outputs. Open outputs using PNP and pMOS transistors will use the opposite internal voltage rail used by NPN and nMOS transistors.