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A Mott transition is a transition from a metal to an insulator, driven by the strong interactions between electrons. [1] One of the simplest models that can capture Mott transition is the Hubbard model .
Since then, these materials as well as others exhibiting a transition between a metal and an insulator have been extensively studied, e.g. by Sir Nevill Mott, after whom the insulating state is named Mott insulator. The first metal-insulator transition to be found was the Verwey transition of magnetite in the 1940s. [3]
An exciton is a bound state of an electron and an electron hole which are attracted to each other by the electrostatic Coulomb force resulting from their opposite charges. It is an electrically neutral quasiparticle regarded as an elementary excitation primarily in condensed matter, such as insulators, semiconductors, some metals, and in some liquids.
Similarly, the Hubbard model can explain the transition from conductor to insulator in systems such as rare-earth pyrochlores as the atomic number of the rare-earth metal increases, because the lattice parameter increases (or the angle between atoms can also change) as the rare-earth element atomic number increases, thus changing the relative ...
The perovskite structure of BSCCO, a high-temperature superconductor and a strongly correlated material.. Strongly correlated materials are a wide class of compounds that include insulators and electronic materials, and show unusual (often technologically useful) electronic and magnetic properties, such as metal-insulator transitions, heavy fermion behavior, half-metallicity, and spin-charge ...
Here's what kale is, why it's so good for you and why some people should still avoid overconsumption.
A new Clean Label Project report suggests some protein powders contain heavy metals lead and cadmium. See which ones are safe here, plus what an expert advises.
Depicted is a transition in which a photon excites an electron from the valence band to the conduction band. Bulk band structure for Si, Ge, GaAs and InAs generated with tight binding model. Note that Si and Ge are indirect band gap with minima at X and L, while GaAs and InAs are direct band gap materials.