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Channel length modulation (CLM) is an effect in field effect transistors, a shortening of the length of the inverted channel region with increase in drain bias for large drain biases. The result of CLM is an increase in current with drain bias and a reduction of output resistance. It is one of several short-channel effects in MOSFET scaling.
As a result, the charge present on the gate retains charge balance by attracting more carriers into the channel, an effect equivalent to lowering the threshold voltage of the device. In effect, the channel becomes more attractive for electrons. In other words, the potential energy barrier for electrons in the channel is lowered. Hence the term ...
In electronics, short-channel effects occur in MOSFETs in which the channel length is comparable to the depletion layer widths of the source and drain junctions. These effects include, in particular, drain-induced barrier lowering , velocity saturation , quantum confinement and hot carrier degradation .
It can be thought of as a second gate, and is sometimes referred to as the back gate, and accordingly the body effect is sometimes called the back-gate effect. [ 3 ] For an enhancement-mode nMOS MOSFET, the body effect upon threshold voltage is computed according to the Shichman–Hodges model, [ 4 ] which is accurate for older process nodes ...
In semiconductor electronics, Dennard scaling, also known as MOSFET scaling, is a scaling law which states roughly that, as transistors get smaller, their power density stays constant, so that the power use stays in proportion with area; both voltage and current scale (downward) with length.
Rise time of damped second order systems [ edit ] According to Levine (1996 , p. 158), for underdamped systems used in control theory rise time is commonly defined as the time for a waveform to go from 0% to 100% of its final value: [ 6 ] accordingly, the rise time from 0 to 100% of an underdamped 2nd-order system has the following form: [ 21 ]
MOSFET, showing gate (G), body (B), source (S), and drain (D) terminals. The gate is separated from the body by an insulating layer (pink).. The MOSFET (metal–oxide–semiconductor field-effect transistor) [1] is a type of insulated-gate field-effect transistor (IGFET) that is fabricated by the controlled oxidation of a semiconductor, typically silicon.
When a clock is gated off, transistors stop switching and NBTI effects accumulate much more rapidly. When the clock is re-enabled, the transistor thresholds have changed and the circuit may not operate. Some low-power designs switch to a low-frequency clock rather than stopping completely in order to mitigate NBTI effects.