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Rapid thermal processing (RTP) is a semiconductor manufacturing process which heats silicon wafers to temperatures exceeding 1,000°C for not more than a few seconds. During cooling wafer temperatures must be brought down slowly to prevent dislocations and wafer breakage due to thermal shock.
A heatsink's thermal mass can be considered as a capacitor (storing heat instead of charge) and the thermal resistance as an electrical resistance (giving a measure of how fast stored heat can be dissipated). Together, these two components form a thermal RC circuit with an associated time constant given by the product of R and C. This quantity ...
Furnace anneals are performed by equipment especially built to heat semiconductor wafers. Furnaces are capable of processing many wafers at a time, but each process can last between several hours and a day. Increasingly, furnace anneals are being supplanted by Rapid Thermal Anneal (RTA) or Rapid Thermal Processing (RTP). This is due to the ...
Negative-bias temperature instability (NBTI) is a key reliability issue in MOSFETs, a type of transistor aging. NBTI manifests as an increase in the threshold voltage and consequent decrease in drain current and transconductance of a MOSFET. The degradation is often approximated by a power-law dependence on time.
The heat dissipation in integrated circuits problem has gained an increasing interest in recent years due to the miniaturization of semiconductor devices. The temperature increase becomes relevant for cases of relatively small-cross-sections wires, because such temperature increase may affect the normal behavior of semiconductor devices.
Transistor aging (sometimes called silicon aging) is the process of silicon transistors developing flaws over time as they are used, degrading performance and reliability, and eventually failing altogether. Despite the name, similar mechanisms may affect transistors made of any kind of semiconductor.
The typical efficiency of TEGs is around 5–8%, although it can be higher. Older devices used bimetallic junctions and were bulky. More recent devices use highly doped semiconductors made from bismuth telluride (Bi 2 Te 3), lead telluride (PbTe), [10] calcium manganese oxide (Ca 2 Mn 3 O 8), [11] [12] or combinations thereof, [13] depending on application temperature.
The term "hot electron" comes from the effective temperature term used when modelling carrier density (i.e., with a Fermi-Dirac function) and does not refer to the bulk temperature of the semiconductor (which can be physically cold, although the warmer it is, the higher the population of hot electrons it will contain all else being equal).