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A 16GB [1] DDR4 SO-DIMM module by Micron. DDR4 memory is supplied in 288-pin dual in-line memory modules (DIMMs), similar in size to 240-pin DDR3 DIMMs. DDR4 RAM modules feature pins that are spaced more closely at 0.85 mm compared to the 1.0 mm spacing in DDR3, allowing for a higher pin density within the same standard DIMM length of 133.35 mm ...
Assorted SO-DIMM Modules A 200-pin PC2-5300 DDR2 SO-DIMM. A 204-pin PC3-10600 DDR3 SO-DIMM. A SO-DIMM slot on a computer motherboard. A SO-DIMM (pronounced "so-dimm" / ˈ s oʊ d ɪ m /, also spelled "SODIMM") or small outline DIMM, is a smaller alternative to a DIMM, being roughly half the physical size of a regular DIMM. The first SODIMMs had ...
PC2-5300 DDR2 SO-DIMM (for notebooks) Comparison of memory modules for desktop PCs (DIMM) Comparison of memory modules for portable/mobile PCs (SO-DIMM) The key difference between DDR2 and DDR SDRAM is the increase in prefetch length. In DDR SDRAM, the prefetch length was two bits for every bit in a word; whereas it is four bits in DDR2 SDRAM.
In computing, serial presence detect (SPD) is a standardized way to automatically access information about a memory module.Earlier 72-pin SIMMs included five pins that provided five bits of parallel presence detect (PPD) data, but the 168-pin DIMM standard changed to a serial presence detect to encode more information.
STX dropped its deal in September 2011, leaving SK Telecom as the sole bidder. In the end, SK acquired Hynix for US$3 billion in February 2012. [29] [30] [31] As Hynix was incorporated into SK Group, its name was changed to SK Hynix. [32] In 2021, Hynix acquired Intel's NAND business for $9 billion, resulting in the establishment of Solidigm ...
High Bandwidth Memory (HBM) is a computer memory interface for 3D-stacked synchronous dynamic random-access memory (SDRAM) initially from Samsung, AMD and SK Hynix.It is used in conjunction with high-performance graphics accelerators, network devices, high-performance datacenter AI ASICs, as on-package cache in CPUs [1] and on-package RAM in upcoming CPUs, and FPGAs and in some supercomputers ...
Compared to DDR2 memory, DDR3 memory uses less power. Some manufacturers further propose using "dual-gate" transistors to reduce leakage of current. [10]According to JEDEC, [11]: 111 1.575 volts should be considered the absolute maximum when memory stability is the foremost consideration, such as in servers or other mission-critical devices.
On 9 January 2017, SK Hynix announced 8 and 16 GB LPDDR4X packages. [ 23 ] [ 24 ] JEDEC published the LPDDR4X standard on 8 March 2017. [ 25 ] Aside from the lower voltage, additional improvements include a single-channel die option for smaller applications, new MCP, PoP and IoT packages, and additional definition and timing improvements for ...