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A positive photoresist is a type of photoresist in which a portion is exposed to light and becomes soluble to the photoresist developer. The unexposed portion of the photoresist remains insoluble in the photoresist developer. Some examples of positive photoresists are: PMMA (polymethylmethacrylate) single-component Resist for deep-UV, e-beam, x-ray
PMMA is an important material in the making of certain lighthouse lenses. [31] PMMA was used for the roofing of the compound in the Olympic Park for the 1972 Summer Olympics in Munich. It enabled a light and translucent construction of the structure. [32] PMMA (under the brand name "Lucite") was used for the ceiling of the Houston Astrodome.
Temperature rise in PMMA resist is mainly from heat conducted from the substrate backward into the resist and from the mask plate through the inner cavity air forward to the resist, with X-ray absorption being tertiary. Thermal effects include chemistry variations due to resist heating and geometry-dependent mask deformation.
SU-8 is a commonly used epoxy-based negative photoresist. Negative refers to a photoresist whereby the parts exposed to UV become cross-linked, while the remainder of the film remains soluble and can be washed away during development. As shown in the structural diagram, SU-8 derives its name from the presence of 8 epoxy groups.
Poly(methyl acrylate) (PMA) is a family of organic polymers with the formula (CH 2 CHCO 2 CH 3) n.It is a synthetic acrylate polymer derived from methyl acrylate monomer. The polymers are colorless.
The U.S. wants Japanese companies to limit exports to China of specialized chemicals required for chipmaking, including photoresist, the report said citing people familiar with the matter.
Positive photoresists are composed of a novolac resin, ethyl lactate solvent, and Diazonaphthaquinone (DQ) as the photoactive compound. [9] Positive photoresist reacts with light to cause the polymer to break down and become soluble in a developer solution. Positive resist has better resistance to etchant than negative photoresist.
The photoresist-coated wafer is then prebaked to drive off excess photoresist solvent, typically at 90 to 100 °C for 30 to 60 seconds on a hotplate. [24] A BARC coating (Bottom Anti-Reflectant Coating) may be applied before the photoresist is applied, to avoid reflections from occurring under the photoresist and to improve the photoresist's ...