Search results
Results From The WOW.Com Content Network
Doping of a pure silicon array. Silicon based intrinsic semiconductor becomes extrinsic when impurities such as Boron and Antimony are introduced.. In semiconductor production, doping is the intentional introduction of impurities into an intrinsic (undoped) semiconductor for the purpose of modulating its electrical, optical and structural properties.
Dopant activation is the process of obtaining the desired electronic contribution from impurity species in a semiconductor host. [1] The term is often restricted to the application of thermal energy following the ion implantation of dopants.
Semiconductor doping with boron, phosphorus, or arsenic is a common application of ion implantation. When implanted in a semiconductor, each dopant atom can create a charge carrier in the semiconductor after annealing. A hole can be created for a p-type dopant, and an electron for an n-type dopant. This modifies the conductivity of the ...
Pure semiconductors that have been altered by the presence of dopants are known as extrinsic semiconductors (see intrinsic semiconductor). Dopants are introduced into semiconductors in a variety of techniques: solid sources, gases, spin on liquid, and ion implanting. See ion implantation, surface diffusion, and solid sources footnote.
Furnace anneals are performed by equipment especially built to heat semiconductor wafers. Furnaces are capable of processing many wafers at a time, but each process can last between several hours and a day. Increasingly, furnace anneals are being supplanted by Rapid Thermal Anneal (RTA) or Rapid Thermal Processing (RTP). This is due to the ...
A semiconductor is a material that is between the conductor and insulator in ability to conduct electrical current. [1] In many cases their conducting properties may be altered in useful ways by introducing impurities (" doping ") into the crystal structure .
The heat dissipation in integrated circuits problem has gained an increasing interest in recent years due to the miniaturization of semiconductor devices. The temperature increase becomes relevant for cases of relatively small-cross-sections wires, because such temperature increase may affect the normal behavior of semiconductor devices.
Rapid thermal processing (RTP) is a semiconductor manufacturing process which heats silicon wafers to temperatures exceeding 1,000°C for not more than a few seconds. During cooling wafer temperatures must be brought down slowly to prevent dislocations and wafer breakage due to thermal shock.