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The parasitic capacitance between the turns of an inductor (e.g. Figure 1) or other wound component is often described as self-capacitance. However, in electromagnetics, the term self-capacitance more correctly refers to a different phenomenon: the capacitance of a conductive object without reference to another object.
These properties of the Miller effect are generalized in the Miller theorem. The Miller capacitance due to undesired parasitic capacitance between the output and input of active devices like transistors and vacuum tubes is a major factor limiting their gain at high frequencies.
The most commonly seen manifestations of parasitic impedances in components are in the parasitic inductance and resistance of the component leads and the parasitic capacitance of the component packaging. For wound components such as inductors and transformers, there is additionally the important effect of parasitic capacitance that exists ...
It is actually mutual capacitance between the individual turns of the coil and is a form of stray or parasitic capacitance. This self capacitance is an important consideration at high frequencies: it changes the impedance of the coil and gives rise to parallel resonance. In many applications this is an undesirable effect and sets an upper ...
In electronic design automation, parasitic extraction is the calculation of the parasitic effects in both the designed devices and the required wiring interconnects of an electronic circuit: parasitic capacitances, parasitic resistances and parasitic inductances, commonly called parasitic devices, parasitic components, or simply parasitics.
In an electrical or electronic circuit or power system part of the energy in play is dissipated by unwanted effects, including energy lost by unwanted heating of resistive components (electricity is also used for the intention of heating, which is not a loss), the effect of parasitic elements (resistance, capacitance, and inductance), skin effect, losses in the windings and cores of ...
Lower parasitic capacitance due to isolation from the bulk silicon, which improves power consumption at matched performance; Resistance to latchup due to complete isolation of the n- and p-well structures; Higher performance at equivalent VDD. Can work at low VDDs [5] Reduced temperature dependency due to no doping
Litz wire is used to make inductors and transformers, especially for high frequency applications where the skin effect is more pronounced and proximity effect can be an even more severe problem. Litz wire is one kind of stranded wire , but, in this case, the reason for its use is not the usual one of avoiding complete wire breakage due to ...