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  2. ‘I’m A Yoga Instructor, And This Is The Best Mat I’ve Used In ...

    www.aol.com/m-yoga-instructor-best-mat-130000814...

    The (Big) Mat 5mm. Attention tall yogis! This 84-inch mat was made for you. The extra-long length provides more surface area for tackling moves like downward dog and child's pose during flow ...

  3. TSM - Wikipedia

    en.wikipedia.org/wiki/TSM

    TSM may refer to: Taiwan Semiconductor Manufacturing Company , a semiconductor foundry (NYSE ticker TSM) TSM (esports) , a professional esports team and gaming community website

  4. Turner Scott Motorsports - Wikipedia

    en.wikipedia.org/wiki/Turner_Scott_Motorsports

    Turner Motorsports, LLC was founded in 1999 in Hallettsville, Texas by Steve Turner, [5] [6] President and CEO of RedHawk Energy, which owns team sponsor Wolf Pack Energy Services. [ 6 ] [ 7 ] The team debuted in the ASA Late Model Series in 2006 with James Buescher , then moved to the USAR Pro Cup Series in 2007.

  5. Thiagarajar School of Management - Wikipedia

    en.wikipedia.org/wiki/Thiagarajar_School_of...

    TSM was established in 1962 by the doyen of the South Indian textile industry, Kalaithanthai Thiru Karumuttu Thiagarajan Chettiar. This 50 year old institute is located in the heart of Madurai city, in a lush green 17- acre campus with global standard infrastructure. TSM initially offered only Executive Development courses till the year 1971.

  6. Taos Regional Airport - Wikipedia

    en.wikipedia.org/wiki/Taos_Regional_Airport

    Taos Regional Airport (IATA: TSM, ICAO: KSKX, FAA LID: SKX) is a public use airport eight nautical miles (15 km) northwest of the central business district of Taos, in Taos County, New Mexico, United States. It is owned by the Town of Taos. [1] FAA's National Plan of Integrated Airport Systems for 2009–2013 classifies it as a general aviation ...

  7. 3 nm process - Wikipedia

    en.wikipedia.org/wiki/3_nm_process

    In 2003, a research team at NEC fabricated the first MOSFETs with a channel length of 3 nm, using the PMOS and NMOS processes. [20] [21] In 2006, a team from the Korea Advanced Institute of Science and Technology (KAIST) and the National Nano Fab Center, developed a 3 nm width multi-gate MOSFET, the world's smallest nanoelectronic device, based on gate-all-around technology.