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DDR4 RAM operates at a voltage of 1.2 V and supports frequencies between 800 and 1600 MHz (DDR4-1600 through DDR4-3200). Compared to DDR3, which operates at 1.5 V with frequencies from 400 to 1067 MHz (DDR3-800 through DDR3-2133), DDR4 offers better performance and energy efficiency. DDR4 speeds are advertised as double the base clock rate due ...
Solid-state hard drives have continued to increase in speed, from ~400 Mbit/s via SATA3 in 2012 up to ~7 GB/s via NVMe/PCIe in 2024, closing the gap between RAM and hard disk speeds, although RAM continues to be an order of magnitude faster, with single-lane DDR5 8000MHz capable of 128 GB/s, and modern GDDR even faster.
Static random-access memory (static RAM or SRAM) is a type of random-access memory (RAM) that uses latching circuitry (flip-flop) to store each bit. SRAM is volatile memory ; data is lost when power is removed.
Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor ...
In the late 1980s IBM invented DDR SDRAM, they built a dual-edge clocking RAM and presented their results at the International Solid-State Circuits Convention in 1990. [ 6 ] [ 7 ] Samsung released the first commercial DDR SDRAM chip (64 Mbit ) in June 1998, [ 3 ] followed soon after by Hyundai Electronics (now SK Hynix ) the same year. [ 8 ]
Synchronous graphics RAM (SGRAM) is a specialized form of SDRAM for graphics adaptors. It is designed for graphics-related tasks such as texture memory and framebuffers , found on video cards . It adds functions such as bit masking (writing to a specified bit plane without affecting the others) and block write (filling a block of memory with a ...
[9] [10] On November 15, 2018, SK Hynix announced completion of its first DDR5 RAM chip; running at 5.2 GT/s at 1.1 V. [11] In February 2019, SK Hynix announced a 6.4 GT/s chip, the highest speed specified by the preliminary DDR5 standard. [12] The first production DDR5 DRAM chip was officially launched by SK Hynix on October 6, 2020. [13] [14]
To date, the only such system to enter widespread production is ferroelectric RAM, or F-RAM (sometimes referred to as FeRAM).F-RAM is a random-access memory similar in construction to DRAM but (instead of a dielectric layer like in DRAM) contains a thin ferroelectric film of lead zirconate titanate [Pb(Zr,Ti)O 3], commonly referred to as PZT.