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In solid-state physics, the electron mobility characterises how quickly an electron can move through a metal or semiconductor when pushed or pulled by an electric field. There is an analogous quantity for holes, called hole mobility. The term carrier mobility refers in general to both electron and hole mobility.
Depending on the model, increased temperature may either increase or decrease carrier mobility, applied electric field can increase mobility by contributing to thermal ionization of trapped charges, and increased concentration of localized states increases the mobility as well. Charge transport in the same material may have to be described by ...
Charge carrier density, also known as carrier concentration, denotes the number of charge carriers per volume. In SI units, it is measured in m −3. As with any density, in principle it can depend on position. However, usually carrier concentration is given as a single number, and represents the average carrier density over the whole material.
Sir Lewis Carl Davidson Hamilton (born 7 January 1985) is a British racing driver, who is contracted to compete in Formula One for Ferrari.Hamilton has won a joint-record seven Formula One World Drivers' Championship titles—tied with Michael Schumacher—and holds the records for most wins (105), pole positions (104), and podium finishes (202), among others.
The formula for evaluating the drift velocity of charge carriers in a material of constant cross-sectional area is given by: [1] =, where u is the drift velocity of electrons, j is the current density flowing through the material, n is the charge-carrier number density, and q is the charge on the charge-carrier.
For 12 seasons, Lewis Hamilton and Mercedes penned one of the most fabled stories in the history of Formula One.. On the track, they rewrote the record books with seven consecutive constructors ...
The proportionality constant is known as mobility of the carrier, which is a material property. A good conductor would have a high mobility value for its charge carrier, which means higher velocity, and consequently higher current values for a given electric field strength. There is a limit though to this process and at some high field value, a ...
In a p-n junction diode, electrons and holes are the minority charge carriers in the p-region and the n-region, respectively. In an unbiased junction, due to the diffusion of charge carriers, the diffusion current, which flows from the p to n region, is exactly balanced by the equal and opposite drift current. [1]