Ads
related to: finfet leakage current meter kit model reviews
Search results
Results From The WOW.Com Content Network
A double-gate FinFET device. A fin field-effect transistor (FinFET) is a multigate device, a MOSFET (metal–oxide–semiconductor field-effect transistor) built on a substrate where the gate is placed on two, three, or four sides of the channel or wrapped around the channel (gate all around), forming a double or even multi gate structure.
Different FinFET structures, which can be modeled by BSIM-CMG. BSIMCMG106.0.0, [65] officially released on March 1, 2012 by UC Berkeley BSIM Group, is the first standard model for FinFETs. BSIM-CMG is implemented in Verilog-A. Physical surface-potential-based formulations are derived for both intrinsic and extrinsic models with finite body doping.
FinFET Digh Hisamoto, Chenming Hu, Tsu-Jae King Liu, Jeffrey Bokor: University of California (Berkeley) [60] [61] 2001 15 nm: FinFET Chenming Hu, Yang-Kyu Choi, Nick Lindert, Tsu-Jae King Liu: University of California (Berkeley) [60] [62] December 2002: 10 nm: FinFET Shibly Ahmed, Scott Bell, Cyrus Tabery, Jeffrey Bokor University of California ...
Subthreshold leakage in an nFET. Subthreshold conduction or subthreshold leakage or subthreshold drain current is the current between the source and drain of a MOSFET when the transistor is in subthreshold region, or weak-inversion region, that is, for gate-to-source voltages below the threshold voltage.
In April 2019, Samsung Electronics announced they had been offering their "5 nm" process (5LPE) tools to their customers since 2018 Q4. [18] In April 2019, TSMC announced that their "5 nm" process (CLN5FF, N5) had begun risk production, and that full chip design specifications were now available to potential customers.
In May 2016, Nvidia released its GeForce 10 series GPUs based on the Pascal architecture, which incorporates TSMC's "16 nm" FinFET technology and Samsung's "14 nm" FinFET technology. [36] [37] [needs update] In June 2016, AMD released its Radeon RX 400 GPUs based on the Polaris architecture, which incorporated "14 nm" FinFET technology from ...