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For example, in a quark–gluon plasma or other QCD matter, at every point in space there is a chemical potential for photons, a chemical potential for electrons, a chemical potential for baryon number, electric charge, and so forth.
A compound semiconductor is a semiconductor compound composed of chemical elements of at least two different species. These semiconductors form for example in periodic table groups 13–15 (old groups III–V), for example of elements from the Boron group (old group III, boron, aluminium, gallium, indium) and from group 15 (old group V, nitrogen, phosphorus, arsenic, antimony, bismuth).
These two examples show that an electrical potential and a chemical potential can both give the same result: A redistribution of the chemical species. Therefore, it makes sense to combine them into a single "potential", the electrochemical potential , which can directly give the net redistribution taking both into account.
µ is the total chemical potential of electrons, or Fermi level (in semiconductor physics, this quantity is more often denoted E F). The Fermi level of a solid is directly related to the voltage on that solid, as measured with a voltmeter. Conventionally, in band structure plots the Fermi level is taken to be the zero of energy (an arbitrary ...
This is a list of unsolved problems in chemistry. Problems in chemistry are considered unsolved when an expert in the field considers it unsolved or when several experts in the field disagree about a solution to a problem.
For example, from Fe 2+ + 2 e − ⇌ Fe(s) (–0.44 V), the energy to form one neutral atom of Fe(s) from one Fe 2+ ion and two electrons is 2 × 0.44 eV = 0.88 eV, or 84 907 J/(mol e −). That value is also the standard formation energy (∆ G f °) for an Fe 2+ ion, since e − and Fe( s ) both have zero formation energy.
The built-in potential of the semiconductor varies, depending on the concentration of doping atoms. In this example, both p and n junctions are doped at a 1e15 cm −3 (160 μC/cm 3) doping level, leading to built-in potential of ~0.59 volts. Reducing depletion width can be inferred from the shrinking movement of carriers across the p–n ...
Doping of a pure silicon array. Silicon based intrinsic semiconductor becomes extrinsic when impurities such as boron and antimony are introduced.. In semiconductor production, doping is the intentional introduction of impurities into an intrinsic (undoped) semiconductor for the purpose of modulating its electrical, optical and structural properties.