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Plasma etching is a form of plasma processing used to fabricate integrated circuits. It involves a high-speed stream of glow discharge of an appropriate gas mixture being shot (in pulses) at a sample. The plasma source, known as etch species, can be either charged or neutral (atoms and radicals).
The plasma produces energetic free radicals, neutrally charged, that react at the surface of the wafer. Since neutral particles attack the wafer from all angles, this process is isotropic. Plasma etching can be isotropic, i.e., exhibiting a lateral undercut rate on a patterned surface approximately the same as its downward etch rate, or can be ...
Plasma processing is a plasma-based material processing technology that aims at modifying the chemical and physical properties of a surface. [1] Plasma processing techniques include: Plasma activation; Plasma ashing; Plasma cleaning; Plasma electrolytic oxidation; Plasma etching; Plasma functionalization; Plasma polymerization; Corona treatment ...
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Reactive-ion etching (RIE) is an etching technology used in microfabrication. RIE is a type of dry etching which has different characteristics than wet etching. RIE uses chemically reactive plasma to remove material deposited on wafers. The plasma is generated under low pressure by an electromagnetic field.