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Overclocking is the process of forcing your computer to run faster than it's intended to go, which can help you run advanced programs on an older PC.
The time to read the first bit of memory from a DRAM without an active row is T RCD + CL. Row Precharge Time T RP: The minimum number of clock cycles required between issuing the precharge command and opening the next row. The time to read the first bit of memory from a DRAM with the wrong row open is T RP + T RCD + CL. Row Active Time T RAS
To allow this, the standard divides the DRAM banks into two or four selectable bank groups, [10] where transfers to different bank groups may be done more rapidly. Because power consumption increases with speed, the reduced voltage allows higher speed operation without unreasonable power and cooling requirements.
Along with memory latency timings, memory dividers are extensively used in overclocking memory subsystems to find stable, working memory states at higher FSB frequencies. The ratio between DRAM and FSB is commonly referred to as "DRAM:FSB ratio". Memory dividers are only applicable to those chipsets in which memory speed is dependent on FSB speeds.
The purpose of overclocking is to increase the operating speed of a given component. [3] Normally, on modern systems, the target of overclocking is increasing the performance of a major chip or subsystem, such as the main processor or graphics controller, but other components, such as system memory or system buses (generally on the motherboard), are commonly involved.
[9] [10] On November 15, 2018, SK Hynix announced completion of its first DDR5 RAM chip; running at 5.2 GT/s at 1.1 V. [11] In February 2019, SK Hynix announced a 6.4 GT/s chip, the highest speed specified by the preliminary DDR5 standard. [12] The first production DDR5 DRAM chip was officially launched by SK Hynix on October 6, 2020. [13] [14]
In computing, serial presence detect (SPD) is a standardized way to automatically access information about a memory module.Earlier 72-pin SIMMs included five pins that provided five bits of parallel presence detect (PPD) data, but the 168-pin DIMM standard changed to a serial presence detect to encode more information.
[1] [2] In asynchronous DRAM, the interval is specified in nanoseconds (absolute time). [3] In synchronous DRAM , the interval is specified in clock cycles. Because the latency is dependent upon a number of clock ticks instead of absolute time, the actual time for an SDRAM module to respond to a CAS event might vary between uses of the same ...