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In semiconductor laser theory, the optical gain is produced in a semiconductor material. The choice of material depends on the desired wavelength and properties such as modulation speed. It may be a bulk semiconductor, but more often a quantum heterostructure. Pumping may be electrically or optically . All these structures can be described in a ...
The damage caused can be repaired by subjecting the crystal to high temperature. This process is called annealing. Furnace anneals may be integrated into other furnace processing steps, such as oxidations, or may be processed on their own. Furnace anneals are performed by equipment especially built to heat semiconductor wafers. Furnaces are ...
The device being tested is electrically stimulated and the device output is monitored. This technique is applied to the back side of the semiconductor device, thereby allowing direct access of the laser to the device active diffusion regions. The effect of the laser on the active transistor region is to generate a localized photocurrent. This ...
As the laser locally heats a defective area on a metal line which is carrying a current, the resulting resistance changes can be detected by monitoring the input current to the device. OBIRCH is useful for detecting electromigration effects resulting in open metal lines. A constant voltage is applied to the device-under-test (DUT). An area of ...
Rapid thermal processing (RTP) is a semiconductor manufacturing process which heats silicon wafers to temperatures exceeding 1,000°C for not more than a few seconds. During cooling wafer temperatures must be brought down slowly to prevent dislocations and wafer breakage due to thermal shock.
XeCl Excimer-Laser Annealing (ELA) is the first key method to produce p-Si by melting a-Si material through laser irradiation. The counterpart of a-Si, polycrystalline silicon, which can be synthesized from amorphous silicon by certain procedures, has several advantages over widely used a-Si TFT: High electron mobility rate;
Laser diodes are formed in compound semiconductor materials that (quite unlike silicon) are able to emit light efficiently. The wavelength of the light emitted by a quantum-well laser is determined by the width of the active region rather than just the bandgap of the materials from which it is constructed. [1]
In semiconductor lasers, the carrier lifetime is the time it takes an electron before recombining via non-radiative processes in the laser cavity. In the frame of the rate equations model , carrier lifetime is used in the charge conservation equation as the time constant of the exponential decay of carriers.