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Julius Edgar Lilienfeld (April 18, 1882 – August 28, 1963) was an Austro-Hungarian-American physicist and electrical engineer, who has been credited with the first patent on the field-effect transistor (FET) (1925). He was never able to build a working practical semiconducting device based on this concept.
The SB-FET (Schottky-barrier field-effect transistor) is a field-effect transistor with metallic source and drain contact electrodes, which create Schottky barriers at both the source-channel and drain-channel interfaces. [64] [65] The GFET is a highly sensitive graphene-based field effect transistor used as biosensors and chemical sensors.
The first patent [11] for the field-effect transistor principle was filed in Canada by Austrian-Hungarian physicist Julius Edgar Lilienfeld on October 22, 1925, but Lilienfeld published no research articles about his devices, and his work was ignored by industry. In 1934 German physicist Dr. Oskar Heil patented another field-effect transistor. [12]
Wanlass was given U.S. patent #3,356,858 for "Low Stand-By Power Complementary Field Effect Circuitry" in 1967. [3] In 1963, while studying MOSFET (metal–oxide–semiconductor field-effect transistor) structures, he noted the movement of charge through oxide onto a gate.
The concept of a field-effect transistor (FET) was first proposed by Julius Edgar Lilienfeld, who received a patent for his idea in 1930. [6] He proposed that a field-effect transistor behaves as a capacitor with a conducting channel between a source and a drain electrode. Applied voltage on the gate electrode controls the amount of charge ...
The basic principle of the field-effect transistor (FET) was first proposed by physicist Julius Edgar Lilienfeld when he filed a patent for a device similar to MESFET in 1926, and for an insulated-gate field-effect transistor in 1928. [14] [50] The FET concept was later also theorized by engineer Oskar Heil in the 1930s and by William Shockley ...
Heil is mentioned as the inventor of an early transistor-like device (see also History of the transistor), based on several patents that were issued to him. [3] [4] Erno Borbely states the following: "Field-effect transistors (FETs) have been around for a long time; in fact, they were invented, at least theoretically, before the bipolar ...
A double-gate FinFET device. A fin field-effect transistor (FinFET) is a multigate device, a MOSFET (metal–oxide–semiconductor field-effect transistor) built on a substrate where the gate is placed on two, three, or four sides of the channel or wrapped around the channel (gate all around), forming a double or even multi gate structure.