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A laser diode (LD, also injection laser diode or ILD or semiconductor laser or diode laser) is a semiconductor device similar to a light-emitting diode in which a diode pumped directly with electrical current can create lasing conditions at the diode's junction.
In semiconductor laser theory, the optical gain is produced in a semiconductor material. The choice of material depends on the desired wavelength and properties such as modulation speed. It may be a bulk semiconductor, but more often a quantum heterostructure. Pumping may be electrically or optically . All these structures can be described in a ...
Flashlamp, laser diode: Periodontal scaling, dental laser, skin resurfacing Neodymium YLF solid-state laser 1.047 and 1.053 μm Flashlamp, laser diode Mostly used for pulsed pumping of certain types of pulsed Ti:sapphire lasers, combined with frequency doubling. Neodymium-doped yttrium orthovanadate (Nd:YVO 4) laser 1.064 μm laser diode
Diagram of a simple VCSEL structure. The vertical-cavity surface-emitting laser (VCSEL / ˈ v ɪ k s əl /) is a type of semiconductor laser diode with laser beam emission perpendicular from the top surface, contrary to conventional edge-emitting semiconductor lasers (also called in-plane lasers) which emit from surfaces formed by cleaving the individual chip out of a wafer.
High power lasers use a single crystal, but many laser diodes are arranged in strips (multiple diodes next to each other in one substrate) or stacks (stacks of substrates). This diode grid can be imaged onto the crystal by means of a lens. Higher brightness (leading to better beam profile and longer diode lifetimes) is achieved by optically ...
A quantum-well laser is a laser diode in which the active region of the device is so narrow that quantum confinement occurs. Laser diodes are formed in compound semiconductor materials that (quite unlike silicon ) are able to emit light efficiently.
The laser diode rate equations model the electrical and optical performance of a laser diode. This system of ordinary differential equations relates the number or density of photons and charge carriers in the device to the injection current and to device and material parameters such as carrier lifetime, photon lifetime, and the optical gain.
This allows quantum dot lasers to be fabricated to operate at wavelengths previously not possible using semiconductor laser technology. [1] One challenge in the further advances with quantum dot lasers is the presence of multicarrier Auger processes which increases the nonradiative rate upon population inversion. [ 2 ]