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  2. Thin film - Wikipedia

    en.wikipedia.org/wiki/Thin_film

    A thin film is a layer of materials ranging from fractions of a nanometer to several micrometers in thickness. [1] The controlled synthesis of materials as thin films (a process referred to as deposition) is a fundamental step in many applications.

  3. Molecular-beam epitaxy - Wikipedia

    en.wikipedia.org/wiki/Molecular-beam_epitaxy

    Molecular-beam epitaxy takes place in high vacuum or ultra-high vacuum (10 −8 –10 −12 Torr).The most important aspect of an MBE process is the deposition rate (typically less than 3,000 nm per hour) that allows the films to grow epitaxially (in layers on top of the existing crystal).

  4. Atomic layer deposition - Wikipedia

    en.wikipedia.org/wiki/Atomic_layer_deposition

    Atomic layer deposition (ALD) is a thin-film deposition technique based on the sequential use of a gas-phase chemical process; it is a subclass of chemical vapour deposition. The majority of ALD reactions use two chemicals called precursors (also called "reactants"). These precursors react with the surface of a material one at a time in a ...

  5. Physical vapor deposition - Wikipedia

    en.wikipedia.org/wiki/Physical_vapor_deposition

    Physical vapor deposition (PVD), sometimes called physical vapor transport (PVT), describes a variety of vacuum deposition methods which can be used to produce thin films and coatings on substrates including metals, ceramics, glass, and polymers. PVD is characterized by a process in which the material transitions from a condensed phase to a ...

  6. Epitaxy - Wikipedia

    en.wikipedia.org/wiki/Epitaxy

    Homoepitaxial growth of semiconductor thin films are generally done by chemical or physical vapor deposition methods that deliver the precursors to the substrate in gaseous state. For example, silicon is most commonly deposited from silicon tetrachloride (or germanium tetrachloride ) and hydrogen at approximately 1200 to 1250 °C: [ 12 ]

  7. Atomic layer epitaxy - Wikipedia

    en.wikipedia.org/wiki/Atomic_layer_epitaxy

    Atomic layer epitaxy (ALE), [1] more generally known as atomic layer deposition (ALD), [2] is a specialized form of thin film growth that typically deposit alternating monolayers of two elements onto a substrate. The crystal lattice structure achieved is thin, uniform, and aligned with the structure of the substrate.

  8. Electromagnetically enhanced Physical Vapor Deposition

    en.wikipedia.org/wiki/Electromagnetically...

    EPVD technology was developed by Paradigm Shift Technologies, Inc., a Canadian company founded in 1995. It was invented to replace the traditional chrome plating. [1]Thin-film deposition is the overarching technology from which PVD, CVD, ALD, EBPVD, and EPVD are derived, each employing different methods to achieve specific coating characteristics.

  9. Metalorganic vapour-phase epitaxy - Wikipedia

    en.wikipedia.org/wiki/Metalorganic_vapour-phase...

    Illustration of the process. Metalorganic vapour-phase epitaxy (MOVPE), also known as organometallic vapour-phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD), [1] is a chemical vapour deposition method used to produce single- or polycrystalline thin films.

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