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For example, a diode with a Zener breakdown voltage of 3.2 V exhibits a voltage drop of very nearly 3.2 V across a wide range of reverse currents. The Zener diode is therefore well suited for applications such as the generation of a reference voltage (e.g. for an amplifier stage), or as a voltage stabilizer for low-current applications. [2]
In electronics, the Zener effect (employed most notably in the appropriately named Zener diode) is a type of electrical breakdown, discovered by Clarence Melvin Zener. It occurs in a reverse biased p-n diode when the electric field enables tunneling of electrons from the valence to the conduction band of a semiconductor , leading to numerous ...
In the Zener diode, the concept of PIV is not applicable. A Zener diode contains a heavily doped p–n junction allowing electrons to tunnel from the valence band of the p-type material to the conduction band of the n-type material, such that the reverse voltage is "clamped" to a known value (called the Zener voltage), and avalanche does not ...
These diodes can indefinitely sustain a moderate level of current during breakdown. The voltage at which the breakdown occurs is called the breakdown voltage . There is a hysteresis effect; once avalanche breakdown has occurred, the material will continue to conduct even if the voltage across it drops below the breakdown voltage.
Zener can refer to: . Zener diode, a type of electronic diode; Zener effect, a type of electrical breakdown which is employed in a Zener diode; Zener pinning, the influence of a dispersion of fine particles on the movement of low- and high angle grain boundaries through a polycrystalline material
The example at right shows how a load line is used to determine the current and voltage in a simple diode circuit. The diode, a nonlinear device, is in series with a linear circuit consisting of a resistor, R and a voltage source, V DD.
The Shockley diode equation relates the diode current of a p-n junction diode to the diode voltage .This relationship is the diode I-V characteristic: = (), where is the saturation current or scale current of the diode (the magnitude of the current that flows for negative in excess of a few , typically 10 −12 A).
A diode can be formed away from a MOSFET source/drain, for example, with an n+ implant in a p-substrate or with a p+ implant in an n-well. If the diode is connected to metal near the gate(s), it can protect the gate oxide. This can be done only on nets with violations, or on every gate (in general by putting such diodes in every library cell).