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Ion implantation setup with mass separator. Ion implantation equipment typically consists of an ion source, where ions of the desired element are produced, an accelerator, where the ions are electrostatically accelerated to a high energy or using radiofrequency, and a target chamber, where the ions impinge on a target, which is the material to be implanted.
It produces ion implantation systems, including high and medium current implanters, and high energy implanters, and curing systems used in the fabrication of semiconductor chips. The company was incorporated in 1995 and is headquartered in Beverly, Massachusetts, United States.
Intevac Qualifies Ion Implantation Production System at Tier 1 Solar Company Company Narrows Q2'13 Revenue Guidance Range SANTA CLARA, Calif.--(BUSINESS WIRE)-- Intevac, Inc. (NAS: IVAC) announced ...
Ion Implantation is a technique extensively used in the field of materials science for material modification. The effect it has on nanomaterials allows manipulation of mechanical, electronic, morphological, and optical properties. [1]
Ion beam mixing can be further enhanced by heat spike effects [4] Ion mixing (IM) is essentially similar in result to interdiffusion, hence most models of ion mixing involve an effective diffusion coefficient that is used to characterize thickness of the reacted layer as a function of ion beam implantation over a period of time. [3]
PIII-process with ECR-plasma source and magnetron. Plasma-immersion ion implantation (PIII) [1] or pulsed-plasma doping (pulsed PIII) is a surface modification technique of extracting the accelerated ions from the plasma by applying a high voltage pulsed DC or pure DC power supply and targeting them into a suitable substrate or electrode with a semiconductor wafer placed over it, so as to ...
Electron capture ionization (ECI) is the ionization of a gas phase atom or molecule by attachment of an electron to create an ion of the form A −•.The reaction is + where the M over the arrow denotes that to conserve energy and momentum a third body is required (the molecularity of the reaction is three).
An ion beam is a beam of ions, a type of charged particle beam. Ion beams have many uses in electronics manufacturing (principally ion implantation) and other industries. There are many ion beam sources, some derived from the mercury vapor thrusters developed by NASA in the 1960s. The most widely used ion beams are of singly-charged ions.
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