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FinFET Digh Hisamoto, Chenming Hu, Tsu-Jae King Liu, Jeffrey Bokor: University of California (Berkeley) [60] [61] 2001 15 nm: FinFET Chenming Hu, Yang-Kyu Choi, Nick Lindert, Tsu-Jae King Liu: University of California (Berkeley) [60] [62] December 2002: 10 nm: FinFET Shibly Ahmed, Scott Bell, Cyrus Tabery, Jeffrey Bokor University of California ...
A double-gate FinFET device. A fin field-effect transistor (FinFET) is a multigate device, a MOSFET (metal–oxide–semiconductor field-effect transistor) built on a substrate where the gate is placed on two, three, or four sides of the channel or wrapped around the channel (gate all around), forming a double or even multi gate structure.
The NEC SX-Aurora TSUBASA processor, introduced in October 2017, [40] used a "16 nm" FinFET process from TSMC and was designed for use with NEC SX supercomputers. [41] [needs update] On July 22, 2018, GlobalFoundries announced their "12 nm" Leading-Performance (12LP) process, based on a licensed 14LP process from Samsung. [42] [needs update]
Different FinFET structures, which can be modeled by BSIM-CMG. BSIMCMG106.0.0, [65] officially released on March 1, 2012 by UC Berkeley BSIM Group, is the first standard model for FinFETs. BSIM-CMG is implemented in Verilog-A. Physical surface-potential-based formulations are derived for both intrinsic and extrinsic models with finite body doping.
In semiconductor manufacturing, the 2 nm process is the next MOSFET (metal–oxide–semiconductor field-effect transistor) die shrink after the 3 nm process node.. The term "2 nanometer", or alternatively "20 angstrom" (a term used by Intel), has no relation to any actual physical feature (such as gate length, metal pitch or gate pitch) of the transistors.
Julius Edgar Lilienfeld, who proposed the concept of a field-effect transistor in 1925.. The concept of a field-effect transistor (FET) was first patented by the Austro-Hungarian born physicist Julius Edgar Lilienfeld in 1925 [1] and by Oskar Heil in 1934, but they were unable to build a working practical semiconducting device based on the concept.