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CMOS inverter (a NOT logic gate). Complementary metal–oxide–semiconductor (CMOS, pronounced "sea-moss ", / s iː m ɑː s /, /-ɒ s /) is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical pairs of p-type and n-type MOSFETs for logic functions. [1]
A CMOS gate draws no current other than leakage when in a steady 1 or 0 state. When the gate switches states, current is drawn from the power supply to charge the capacitance at the output of the gate. This means that the current draw of CMOS devices increases with switching rate (controlled by clock speed, typically).
A transmission gate (TG) is an analog gate similar to a relay that can conduct in both directions or block by a control signal with almost any voltage potential. [1] It is a CMOS-based switch, in which PMOS passes a strong 1 but poor 0, and NMOS passes strong 0 but poor 1.
Cascode Voltage Switch Logic (CVSL) refers to a CMOS-type logic family which is designed for certain advantages. It requires mainly N-channel MOSFET transistors to implement the logic using true and complementary input signals, and also needs two P-channel transistors at the top to pull one of the outputs high. This logic family is also known ...
This "complementary" or CMOS type of switch uses one P-MOS and one N-MOS FET to counteract the limitations of the single-type switch. The FETs have their drains and sources connected in parallel, the body of the P-MOS is connected to the high potential ( V DD ) and the body of the N-MOS is connected to the low potential ( gnd ).
Schematic of two stages of CMOS inverter, showing input and output voltage-time plots. I on and I off (along with I DG, I SD and I DB components) indicate technologically controlled factors. Credit: Prof. Robert Dutton in CRC Electronic Design Automation for IC Handbook, Vol II, Chapter 25, by permission.
The basic TFET structure is similar to a MOSFET except that the source and drain terminals of a TFET are doped of opposite types (see figure). A common TFET device structure consists of a P-I-N (p-type, intrinsic, n-type) junction, in which the electrostatic potential of the intrinsic region is controlled by a gate terminal.
MOSFET (PMOS and NMOS) demonstrations Date Channel length Oxide thickness [1] MOSFET logic Researcher(s) Organization Ref; June 1960: 20,000 nm: 100 nm: PMOS: Mohamed M. Atalla, Dawon Kahng: Bell Telephone Laboratories [2] [3] NMOS: 10,000 nm: 100 nm: PMOS Mohamed M. Atalla, Dawon Kahng: Bell Telephone Laboratories [4] NMOS May 1965: 8,000 nm ...