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XeCl Excimer-Laser Annealing (ELA) is the first key method to produce p-Si by melting a-Si material through laser irradiation. The counterpart of a-Si, polycrystalline silicon, which can be synthesized from amorphous silicon by certain procedures, has several advantages over widely used a-Si TFT: High electron mobility rate;
In semiconductor laser theory, the optical gain is produced in a semiconductor material. The choice of material depends on the desired wavelength and properties such as modulation speed. It may be a bulk semiconductor, but more often a quantum heterostructure. Pumping may be electrically or optically . All these structures can be described in a ...
The damage caused can be repaired by subjecting the crystal to high temperature. This process is called annealing. Furnace anneals may be integrated into other furnace processing steps, such as oxidations, or may be processed on their own. Furnace anneals are performed by equipment especially built to heat semiconductor wafers. Furnaces are ...
The resulting dependence of g on the energy flux has been called the main nonlinear effect in semiconductor lasers; [1] [2] derivation of this relation formula is presented in. [1] [2] Experimental wavelength shift versus normalized current (J/Jth), and the output power versus current have been simulated for a high-power laser with a quantum ...
The semiconductor used for carrier generation has usually a band-gap smaller than the photon energy, and the most common choice is pure germanium. [ 25 ] [ 26 ] Most detectors use a p–n junction for carrier extraction, however, detectors based on metal–semiconductor junctions (with germanium as the semiconductor) have been integrated into ...
The device being tested is electrically stimulated and the device output is monitored. This technique is applied to the back side of the semiconductor device, thereby allowing direct access of the laser to the device active diffusion regions. The effect of the laser on the active transistor region is to generate a localized photocurrent. This ...
Rapid thermal processing (RTP) is a semiconductor manufacturing process which heats silicon wafers to temperatures exceeding 1,000°C for not more than a few seconds. During cooling wafer temperatures must be brought down slowly to prevent dislocations and wafer breakage due to thermal shock.
The laser induces local thermal gradients in the device, which result in changes to the amount of power that the device uses. A laser is scanned over the surface of the device while it is under electrical bias. The device is biased using a constant current source, and the power supply pin voltage is monitored for changes.