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XeCl Excimer-Laser Annealing (ELA) is the first key method to produce p-Si by melting a-Si material through laser irradiation. The counterpart of a-Si, polycrystalline silicon, which can be synthesized from amorphous silicon by certain procedures, has several advantages over widely used a-Si TFT: High electron mobility rate;
In semiconductor laser theory, the optical gain is produced in a semiconductor material. The choice of material depends on the desired wavelength and properties such as modulation speed. It may be a bulk semiconductor, but more often a quantum heterostructure. Pumping may be electrically or optically . All these structures can be described in a ...
Nanowire lasers can be grown site-selectively on Si/SOI wafers with conventional MBE techniques, allowing for pristine structural quality without defects. Nanowire lasers using the group-III nitride and ZnO materials systems have been demonstrated to emit in the visible and ultraviolet, however infrared at the 1.3–1.55 μm is important for telecommunication bands. [3]
The resulting dependence of g on the energy flux has been called the main nonlinear effect in semiconductor lasers; [1] [2] derivation of this relation formula is presented in. [1] [2] Experimental wavelength shift versus normalized current (J/Jth), and the output power versus current have been simulated for a high-power laser with a quantum ...
The damage caused can be repaired by subjecting the crystal to high temperature. This process is called annealing. Furnace anneals may be integrated into other furnace processing steps, such as oxidations, or may be processed on their own. Furnace anneals are performed by equipment especially built to heat semiconductor wafers. Furnaces are ...
The Electra KrF laser demonstrates 90,000 shots over 10 hours. The term excimer is short for 'excited dimer', while 'exciplex' is short for 'excited complex'. Most excimer lasers are of the noble gas halide type, for which the term excimer is, strictly speaking, a misnomer. (Although less commonly used, the proper term for such is an exciplex ...
Rapid thermal processing (RTP) is a semiconductor manufacturing process which heats silicon wafers to temperatures exceeding 1,000°C for not more than a few seconds. During cooling wafer temperatures must be brought down slowly to prevent dislocations and wafer breakage due to thermal shock.
Laser diodes are formed in compound semiconductor materials that (quite unlike silicon) are able to emit light efficiently. The wavelength of the light emitted by a quantum-well laser is determined by the width of the active region rather than just the bandgap of the materials from which it is constructed. [ 1 ]