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Pinch-off voltage may refer to one of two different characteristics of a transistor: . in insulated-gate field-effect transistors (IGFET), "pinch-off" refers to the channel pinching that leads to current saturation behaviour under high source–drain bias.
The result of CLM is an increase in current with drain bias and a reduction of output resistance. It is one of several short-channel effects in MOSFET scaling. It also causes distortion in JFET amplifiers. [1] To understand the effect, first the notion of pinch-off of the channel is introduced. The channel is formed by attraction of carriers to ...
When referring to a junction field-effect transistor (JFET), the threshold voltage is often called pinch-off voltage instead. [ 1 ] [ 2 ] This is somewhat confusing since pinch off applied to insulated-gate field-effect transistor (IGFET) refers to the channel pinching that leads to current saturation behavior under high source–drain bias ...
If the MOSFET is an n-channel or nMOS FET, then the source and drain are n+ regions and the body is a p region. If the MOSFET is a p-channel or pMOS FET, then the source and drain are p+ regions and the body is a n region. The source is so named because it is the source of the charge carriers (electrons for n-channel, holes for p-channel) that ...
The MOSFET is also capable of handling higher power than the JFET. [35] The MOSFET was the first truly compact transistor that could be miniaturised and mass-produced for a wide range of uses. [6] The MOSFET thus became the most common type of transistor in computers, electronics, [36] and communications technology (such as smartphones). [37]
These devices are off at zero gate–source voltage. NMOS can be turned on by pulling the gate voltage higher than the source voltage, PMOS can be turned on by pulling the gate voltage lower than the source voltage. In most circuits, this means pulling an enhancement-mode MOSFET's gate voltage towards its drain voltage turns it on.
The pinch-off voltage (V p) (also known as threshold voltage [7] [8] or cut-off voltage [9] [10] [11]) varies considerably, even among devices of the same type. For example, V GS(off) for the Temic J202 device varies from −0.8 V to −4 V , [ 12 ] while the V GS(off) for the J308 varies between −1 V and −6.5 V . [ 13 ] (
FlexFET is a planar, independently double-gated transistor with a damascene metal top gate MOSFET and an implanted JFET bottom gate that are self-aligned in a gate trench. . This device is highly scalable due to its sub-lithographic channel length; non-implanted ultra-shallow source and drain extensions; non-epi raised source and drain regions; and gate-last fl