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Generally, forced convection heat sink thermal performance is improved by increasing the thermal conductivity of the heat sink materials, increasing the surface area (usually by adding extended surfaces, such as fins or foam metal) and by increasing the overall area heat transfer coefficient (usually by increase fluid velocity, such as adding ...
The heat dissipation in integrated circuits problem has gained an increasing interest in recent years due to the miniaturization of semiconductor devices. The temperature increase becomes relevant for cases of relatively small-cross-sections wires, because such temperature increase may affect the normal behavior of semiconductor devices.
This velocity is a characteristic of the material and a strong function of doping or impurity levels and temperature. It is one of the key material and semiconductor device properties that determine a device such as a transistor's ultimate limit of speed of response and frequency.
The term "hot electron" comes from the effective temperature term used when modelling carrier density (i.e., with a Fermi-Dirac function) and does not refer to the bulk temperature of the semiconductor (which can be physically cold, although the warmer it is, the higher the population of hot electrons it will contain all else being equal).
Thermal velocity or thermal speed is a typical velocity of the thermal motion of particles that make up a gas, liquid, etc. Thus, indirectly, thermal velocity is a measure of temperature. Technically speaking, it is a measure of the width of the peak in the Maxwell–Boltzmann particle velocity distribution.
Rapid thermal processing (RTP) is a semiconductor manufacturing process which heats silicon wafers to temperatures exceeding 1,000°C for not more than a few seconds. During cooling wafer temperatures must be brought down slowly to prevent dislocations and wafer breakage due to thermal shock.
Velocity saturation greatly affects the voltage transfer characteristics of a field-effect transistor, which is the basic device used in most integrated circuits. If a semiconductor device enters velocity saturation, an increase in voltage applied to the device will not cause a linear increase in current as would be expected by Ohm's law ...
A BJT uses a single crystal of material in its circuit that is divided into two types of semiconductor, an n-type and p-type. These two types of doped semiconductors are spread over three different regions in respective order: the emitter region, the base region and the collector region. The emitter region and collector region are quantitively ...