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  2. Channel length modulation - Wikipedia

    en.wikipedia.org/wiki/Channel_length_modulation

    Channel length modulation (CLM) is an effect in field effect transistors, a shortening of the length of the inverted channel region with increase in drain bias for large drain biases. The result of CLM is an increase in current with drain bias and a reduction of output resistance. It is one of several short-channel effects in MOSFET scaling.

  3. Drain-induced barrier lowering - Wikipedia

    en.wikipedia.org/wiki/Drain-induced_barrier_lowering

    As a result, the charge present on the gate retains charge balance by attracting more carriers into the channel, an effect equivalent to lowering the threshold voltage of the device. In effect, the channel becomes more attractive for electrons. In other words, the potential energy barrier for electrons in the channel is lowered. Hence the term ...

  4. MOSFET - Wikipedia

    en.wikipedia.org/wiki/MOSFET

    In electronics, the metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, MOS FET, or MOS transistor) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device.

  5. Short-channel effect - Wikipedia

    en.wikipedia.org/wiki/Short-channel_effect

    In electronics, short-channel effects occur in MOSFETs in which the channel length is comparable to the depletion layer widths of the source and drain junctions. These effects include, in particular, drain-induced barrier lowering , velocity saturation , quantum confinement and hot carrier degradation .

  6. Pseudo Jahn–Teller effect - Wikipedia

    en.wikipedia.org/wiki/Pseudo_Jahn–Teller_effect

    The pseudo Jahn–Teller effect (PJTE), occasionally also known as second-order JTE, is a direct extension of the Jahn–Teller effect (JTE) where spontaneous symmetry breaking in polyatomic systems (molecules and solids) occurs even when the relevant electronic states are not degenerate. The PJTE can occur under the influence of sufficiently ...

  7. 2 nm process - Wikipedia

    en.wikipedia.org/wiki/2_nm_process

    In semiconductor manufacturing, the 2 nm process is the next MOSFET (metal–oxide–semiconductor field-effect transistor) die shrink after the 3 nm process node.. The term "2 nanometer", or alternatively "20 angstrom" (a term used by Intel), has no relation to any actual physical feature (such as gate length, metal pitch or gate pitch) of the transistors.

  8. 8 Everyday Items the Middle Class Won’t Be Able To ... - AOL

    www.aol.com/8-everyday-items-middle-class...

    Since the middle class refers to a wide range of incomes stretching from around $50,000 to $150,000, depending on where people fall on that spectrum, some everyday goods and services might become ...

  9. Threshold voltage - Wikipedia

    en.wikipedia.org/wiki/Threshold_voltage

    It can be thought of as a second gate, and is sometimes referred to as the back gate, and accordingly the body effect is sometimes called the back-gate effect. [ 3 ] For an enhancement-mode nMOS MOSFET, the body effect upon threshold voltage is computed according to the Shichman–Hodges model, [ 4 ] which is accurate for older process nodes ...