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Immersion lithography is a technique used in semiconductor manufacturing to enhance the resolution and accuracy of the lithographic process. It involves using a liquid medium, typically water, between the lens and the wafer during exposure.
This method, called immersion lithography, is the current cutting edge of practical production technology. It works because numerical aperture is a function of the maximum angle of light that can enter the lens and the refractive index of the medium through which the light passes. When water is employed as the medium, it greatly increases ...
Many technologies once termed "next generation" have entered commercial production, and open-air photolithography, with visible light projected through hand-drawn photomasks, has gradually progressed to deep-UV immersion lithography using optical proximity correction, inverse lithography technology, off-axis illumination, phase-shift masks ...
Optical proximity correction (OPC) is a photolithography enhancement technique commonly used to compensate for image errors due to diffraction or process effects. The need for OPC is seen mainly in the making of semiconductor devices and is due to the limitations of light to maintain the edge placement integrity of the original design, after ...
The National Center for Preservation Technology and Training (NCPTT) is a research, technology, and training center of the U.S. National Park Service located on the campus of Northwestern State University. Since its founding in 1994, NCPTT has awarded over $7 million in grants for research that fulfills its mission of advancing the use of ...
When patterns include feature sizes near the resolution limit, it is common that different arrangements of such features will require specific illuminations for them to be printed. [ 21 ] The most basic example is horizontal dense lines vs. vertical lines (half-pitch < 0.35 λ/NA), where the former requires a North-South dipole illumination ...
Historically, resolution enhancements in photolithography have been achieved through the progression of stepper illumination sources to smaller and smaller wavelengths — from "g-line" (436 nm) and "i-line" (365 nm) sources based on mercury lamps, to the current systems based on deep ultraviolet excimer lasers sources at 193 nm.
Hence, it is commonly used for the origination of master structures for subsequent micro or nano replication processes [4] (e.g. nanoimprint lithography) or for testing photoresist processes for lithography techniques based on new wavelengths (e.g., EUV or 193 nm immersion). In addition, interfering laser beams of high-power pulsed lasers ...
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