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Electrochemical Random-Access Memory (ECRAM) is a type of non-volatile memory (NVM) with multiple levels per cell (MLC) designed for deep learning analog acceleration. [1] [2] [3] An ECRAM cell is a three-terminal device composed of a conductive channel, an insulating electrolyte, an ionic reservoir, and metal contacts.
Computational models of memory encoding have been developed in order to better understand and simulate the mostly expected, yet sometimes wildly unpredictable, behaviors of human memory. Different models have been developed for different memory tasks, which include item recognition, cued recall, free recall, and sequence memory, in an attempt ...
In addition to its effects during the encoding phase, emotional arousal appears to increase the likelihood of memory consolidation during the retention stage of memory (the process of creating a permanent record of the encoded information). A number of studies show that over time, memories for neutral stimuli decrease but memories for arousing ...
The programmable metallization cell, or PMC, is a non-volatile computer memory developed at Arizona State University. PMC, a technology developed to replace the widely used flash memory , providing a combination of longer lifetimes, lower power, and better memory density.
A ternary computer using fiber optics could use dark as 0 and two orthogonal polarizations of light as +1 and −1. [13] The Josephson junction has been proposed as a balanced ternary memory cell, using circulating superconducting currents, either clockwise, counterclockwise, or off. "The advantages of the proposed memory circuit are capability ...
In 1967, Dennard filed a patent for a single-transistor DRAM memory cell, based on MOS technology. [21] The first commercial bipolar 64-bit SRAM was released by Intel in 1969 with the 3101 Schottky TTL. One year later, it released the first DRAM integrated circuit chip, the Intel 1103, based on MOS technology.
Charge trap flash (CTF) is a semiconductor memory technology used in creating non-volatile NOR and NAND flash memory. It is a type of floating-gate MOSFET memory technology , but differs from the conventional floating-gate technology in that it uses a silicon nitride film to store electrons rather than the doped polycrystalline silicon typical ...
If needed, contents of the computer memory can be transferred to storage; a common way of doing this is through a memory management technique called virtual memory. Modern computer memory is implemented as semiconductor memory, [5] [6] where data is stored within memory cells built from MOS transistors and other components on an integrated ...