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  2. JFET - Wikipedia

    en.wikipedia.org/wiki/JFET

    The JFET is a long channel of semiconductor material, doped to contain an abundance of positive charge carriers or holes (p-type), or of negative carriers or electrons (n-type).

  3. Field-effect transistor - Wikipedia

    en.wikipedia.org/wiki/Field-effect_transistor

    The first FET device to be successfully built was the junction field-effect transistor (JFET). [2] A JFET was first patented by Heinrich Welker in 1945. [4] The static induction transistor (SIT), a type of JFET with a short channel, was invented by Japanese engineers Jun-ichi Nishizawa and Y. Watanabe in 1950.

  4. Common source - Wikipedia

    en.wikipedia.org/wiki/Common_source

    The easiest way to tell if a FET is common source, common drain, or common gate is to examine where the signal enters and leaves. The remaining terminal is what is known as "common". In this example, the signal enters the gate, and exits the drain. The only terminal remaining is the source. This is a common-source FET circuit.

  5. Depletion and enhancement modes - Wikipedia

    en.wikipedia.org/wiki/Depletion_and_enhancement...

    The mode can be determined by the sign of the threshold voltage (gate voltage relative to source voltage at the point where an inversion layer just forms in the channel): for an N-type FET, enhancement-mode devices have positive thresholds, and depletion-mode devices have negative thresholds; for a P-type FET, enhancement-mode have negative ...

  6. Threshold voltage - Wikipedia

    en.wikipedia.org/wiki/Threshold_voltage

    The conductive channel connects from source to drain at the FET's threshold voltage. Even more electrons attract towards the gate at higher V GS, which widens the channel. The reverse is true for the p-channel "enhancement-mode" MOS transistor. When V GS = 0 the device is “OFF” and the channel is open / non-conducting. The application of a ...

  7. Voltage-controlled resistor - Wikipedia

    en.wikipedia.org/wiki/Voltage-controlled_resistor

    JFETs can withstand electrical, electromagnetic interference (EMI) and other high radiation shocks better than MOSFET circuits. [23] JFETs can even serve as an input surge-protection device. [24] JFETs are also less susceptible to electrostatic discharge than MOSFETs. [25]

  8. Discrete complementary JFETS - Wikipedia

    en.wikipedia.org/wiki/Discrete_complementary_JFETS

    Improved JFET process technologies, discrete JFET devices and JFET topologies will continue to challenge highly integrated monolithic designs for sockets in high quality electronic products. The primary reasons are cost and customization. Costs are too high for integrated circuit companies to integrate customized high-performance for niche ...

  9. Hartley oscillator - Wikipedia

    en.wikipedia.org/wiki/Hartley_oscillator

    Hartley oscillator using a common-drain n-channel JFET instead of a tube.. The Hartley oscillator is distinguished by a tank circuit consisting of two series-connected coils (or, often, a tapped coil) in parallel with a capacitor, with an amplifier between the relatively high impedance across the entire LC tank and the relatively low voltage/high current point between the coils.