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Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor ...
Software can "partition" a portion of a computer's RAM, allowing it to act as a much faster hard drive that is called a RAM disk. A RAM disk loses the stored data when the computer is shut down, unless memory is arranged to have a standby battery source, or changes to the RAM disk are written out to a nonvolatile disk.
Non-volatile random-access memory (NVRAM) is random-access memory that retains data without applied power. This is in contrast to dynamic random-access memory (DRAM) and static random-access memory (SRAM), which both maintain data only for as long as power is applied, or forms of sequential-access memory such as magnetic tape, which cannot be randomly accessed but which retains data ...
In the late 1980s IBM invented DDR SDRAM, they built a dual-edge clocking RAM and presented their results at the International Solid-State Circuits Convention in 1990. [ 6 ] [ 7 ] Samsung released the first commercial DDR SDRAM chip (64 Mbit ) in June 1998, [ 3 ] followed soon after by Hyundai Electronics (now SK Hynix ) the same year. [ 8 ]
Static random-access memory (static RAM or SRAM) is a type of random-access memory (RAM) that uses latching circuitry (flip-flop) to store each bit. SRAM is volatile memory ; data is lost when power is removed.
Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a form of random-access memory similar in construction to DRAM, both use a capacitor and transistor but instead of using a simple dielectric layer the capacitor, an F-RAM cell contains a thin ferroelectric film of lead zirconate titanate [Pb(Zr,Ti)O 3], commonly referred to as PZT. The Zr/Ti atoms in ...
DDR4 RAM operates at a voltage of 1.2 V and supports frequencies between 800 and 1600 MHz (DDR4-1600 through DDR4-3200). Compared to DDR3, which operates at 1.5 V with frequencies from 400 to 1067 MHz (DDR3-800 through DDR3-2133), DDR4 offers better performance and energy efficiency. DDR4 speeds are advertised as double the base clock rate due ...
Internal RAM, or IRAM or on-chip RAM (OCRAM), is the address range of RAM that is internal to the CPU. Some object files contain an .iram section.