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A 16GB [1] DDR4 SO-DIMM module by Micron. DDR4 memory is supplied in 288-pin dual in-line memory modules (DIMMs), similar in size to 240-pin DDR3 DIMMs. DDR4 RAM modules feature pins that are spaced more closely at 0.85 mm compared to the 1.0 mm spacing in DDR3, allowing for a higher pin density within the same standard DIMM length of 133.35 mm ...
Dual-ported video RAM (VRAM) is a dual-ported RAM variant of dynamic RAM (DRAM), which was once commonly used to store the Framebuffer in Graphics card, . Dual-ported RAM allows the CPU to read and write data to memory as if it were a conventional DRAM chip, while adding a second port that reads out data.
GDDR5X SDRAM on an NVIDIA GeForce GTX 1080 Ti graphics card. Video random-access memory (VRAM) is dedicated computer memory used to store the pixels and other graphics data as a framebuffer to be rendered on a computer monitor. [1] It often uses a different technology than other computer memory, in order to be read quickly for display on a screen.
The DDR4 SDRAM is a high-speed dynamic random-access memory internally configured as 16 banks, 4 bank groups with 4 banks for each bank group for ×4/×8 and 8 banks, 2 bank groups with 4 banks for each bank group for ×16 DRAM. The DDR4 SDRAM uses an 8n prefetch architecture to achieve high-speed
The documentation of modern memory modules, such as the standards for the memory ICs [8] and a reference design of the module [9] requires over one hundred pages. The standards specify the physical and electrical characteristics of the modules, and include the data for computer simulations of the memory module operating in a system. [10]
It is for this reason that DDR3-2666 CL9 has a smaller absolute CAS latency than DDR3-2000 CL7 memory. Both for DDR3 and DDR4, the four timings described earlier are not the only relevant timings and give a very short overview of the performance of memory. The full memory timings of a memory module are stored inside of a module's SPD chip.
GDDR SDRAM is distinct from the more widely known types of DDR SDRAM, such as DDR4 and DDR5, although they share some of the same features—including double data rate (DDR) data transfers. As of 2025 [update] , GDDR SDRAM has been succeeded by GDDR2 , GDDR3 , GDDR4 , GDDR5 , GDDR5X , GDDR6 , GDDR6X , GDDR6W and GDDR7 .
At Hot Chips 2016, Samsung announced GDDR6 as the successor of GDDR5X. [5] [6] Samsung later announced that the first products would be 16 Gbit/s, 1.35 V chips.[7] [8] In January 2018, Samsung began mass production of 16 Gb (2 GB) GDDR6 chips, fabricated on a 10 nm class process and with a data rate of up to 18 Gbit/s per pin.