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An example is the Stone Wales defect in nanotubes, which consists of two adjacent 5-membered and two 7-membered atom rings. Schematic illustration of defects in a compound solid, using GaAs as an example. Amorphous solids may contain defects. These are naturally somewhat hard to define, but sometimes their nature can be quite easily understood.
The twin thickness saturated once a critical residual dislocations’ density reached the coherent twin-parent crystal boundary. [ 33 ] [ 49 ] Significant attention has been paid to the crystallography , [ 50 ] morphology [ 51 ] and macro mechanical effects [ 52 ] of deformation twinning.
Grain boundaries are two-dimensional defects in the crystal structure, and tend to decrease the electrical and thermal conductivity of the material. Most grain boundaries are preferred sites for the onset of corrosion [1] and for the precipitation of new phases from the solid. They are also important to many of the mechanisms of creep. [2]
Stacking faults are two dimensional planar defects that can occur in crystalline materials. They can be formed during crystal growth, during plastic deformation as partial dislocations move as a result of dissociation of a perfect dislocation, or by condensation of point defects during high-rate plastic deformation. [3]
Twinning is a phenomenon somewhere between a crystallographic defect and a grain boundary. Like a grain boundary, a twin boundary has different crystal orientations on its two sides. But unlike a grain boundary, the orientations are not random, but related in a specific, mirror-image way. Mosaicity is a spread of crystal plane orientations.
In crystallography, a vacancy is a type of point defect in a crystal where an atom is missing from one of the lattice sites. [2] Crystals inherently possess imperfections, sometimes referred to as crystallographic defects. Vacancies occur naturally in all crystalline materials.
Some of the model-based FDI techniques include [2] observer-based approach, parity-space approach, and parameter identification based methods. There is another trend of model-based FDI schemes, which is called set-membership methods. These methods guarantee the detection of fault under certain conditions.
An electron backscatter diffraction pattern of monocrystalline silicon, taken at 20 kV with a field-emission electron source. Electron backscatter diffraction (EBSD) is a scanning electron microscopy (SEM) technique used to study the crystallographic structure of materials.