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A twin boundary is a defect that introduces a plane of mirror symmetry in the ordering of a crystal. For example, in cubic close-packed crystals, the stacking sequence of a twin boundary would be ABCABCBACBA. On planes of single crystals, steps between atomically flat terraces can also be regarded as planar defects.
The twin thickness saturated once a critical residual dislocations’ density reached the coherent twin-parent crystal boundary. [ 33 ] [ 49 ] Significant attention has been paid to the crystallography , [ 50 ] morphology [ 51 ] and macro mechanical effects [ 52 ] of deformation twinning.
In a TEM, bright field imaging is one technique used to identify the location of stacking faults. Typical image of stacking fault is dark with bright fringes near a low-angle grain boundary, sandwiched by dislocations at the end of the stacking fault. Fringes indicate that the stacking fault is at an incline with respect to the viewing plane. [3]
An electron backscatter diffraction pattern of monocrystalline silicon, taken at 20 kV with a field-emission electron source. Electron backscatter diffraction (EBSD) is a scanning electron microscopy (SEM) technique used to study the crystallographic structure of materials.
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The Reed–Solomon code is actually a family of codes, where every code is characterised by three parameters: an alphabet size , a block length, and a message length, with <. The set of alphabet symbols is interpreted as the finite field F {\displaystyle F} of order q {\displaystyle q} , and thus, q {\displaystyle q} must be a prime power .
Some of the model-based FDI techniques include [2] observer-based approach, parity-space approach, and parameter identification based methods. There is another trend of model-based FDI schemes, which is called set-membership methods. These methods guarantee the detection of fault under certain conditions.
Spontaneous nanowire formation by non-catalytic methods were explained by the dislocation present in specific directions [20] [21] or the growth anisotropy of various crystal faces. More recently, after microscopy advancement, the nanowire growth driven by screw dislocations [22] [23] or twin boundaries [24] were demonstrated.