Search results
Results From The WOW.Com Content Network
Jan Czochralski (Polish pronunciation: [ˈjan t͡ʂɔˈxralskʲi]; 23 October 1885 – 22 April 1953) was a Polish chemist who invented the Czochralski method, which is used for growing single crystals and in the production of semiconductor wafers.
The Czochralski method, also Czochralski technique or Czochralski process, is a method of crystal growth used to obtain single crystals of semiconductors (e.g. silicon, germanium and gallium arsenide), metals (e.g. palladium, platinum, silver, gold), salts and synthetic gemstones.
In the semiconductor industry synthetic boules can be made by a number of methods, such as the Bridgman technique [2] and the Czochralski process, which result in a cylindrical rod of material. In the Czochralski process a seed crystal is required to create a larger crystal, or ingot. This seed crystal is dipped into the pure molten silicon and ...
Edge-defined film-fed growth or EFG was developed for sapphire growth in the late 1960s by Harold LaBelle and A. Mlavsky at Tyco Industries. [4] A shaper (also referred to as a die) having dimensions approximately equal to the crystal to be grown rests above the surface of the melt which is contained in a crucible.
Most true synthetic alexandrite is grown by the Czochralski method, known as “pulling”.Another method is a “floating zone”, developed in 1964 by an Armenian scientist Khachatur Saakovich Bagdasarov, of the Russian (former Soviet) Institute of Crystallography, Moscow.
Main page; Contents; Current events; Random article; About Wikipedia; Contact us; Help; Learn to edit; Community portal; Recent changes; Upload file
It can be grown from a melt by the Czochralski technique. It belongs to the monoclinic system with space group C s 2 -Cm. Each neodymium ion replaces a yttrium ion in the YCOB crystal structure.
The Bridgman method is a popular way of producing certain semiconductor crystals such as gallium arsenide, for which the Czochralski method is more difficult. The process can reliably produce single-crystal ingots, but does not necessarily result in uniform properties through the crystal. [1] Diagram of the Bridgman-Stockbarger method