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The first DDR4 memory module prototype was manufactured by Samsung and announced in January 2011. [a] Physical comparison of DDR, DDR2, DDR3, and DDR4 SDRAM Front and back of 8 GB [1] DDR4 memory modules. 2005: Standards body JEDEC began working on a successor to DDR3 around 2005, [14] about 2 years before the launch of DDR3 in 2007.
Compression Attached Memory Module (CAMM) is a memory module form factor which uses a land grid array, and developed at Dell by engineer Tom Schnell as a replacement for DIMMs and SO-DIMMs which use edge connectors and had been in use for about 25 years. [1] The first SO-DIMMs were introduced by JEDEC in 1997. [2] [3] [4] [5]
Low-Power Double Data Rate (LPDDR), also known as LPDDR SDRAM, is a type of synchronous dynamic random-access memory (SDRAM) that consumes less power than other random access memory designs and is thus targeted for mobile computing devices such as laptop computers and smartphones. Older variants are also known as Mobile DDR, and abbreviated as ...
32 GB [4] Same build as miniSD but greater capacity and transfer speed, 4 GB to 32 GB. 8 GB is largest in early-2011 (not compatible with older host devices). microSDHC: 2007 32 GB [4] Same build as microSD but greater capacity and transfer speed, 4 GB to 32 GB. [5] (not compatible with older host devices) SDXC: 2009 1 TB
Two types of DIMMs (dual in-line memory modules): a 168-pin SDRAM module (top) and a 184-pin DDR SDRAM module (bottom). Memory modules of SK Hynix. In computing, a memory module or RAM stick is a printed circuit board on which memory integrated circuits are mounted.
The DDR4 SDRAM is a high-speed dynamic random-access memory internally configured as 16 banks, 4 bank groups with 4 banks for each bank group for ×4/×8 and 8 banks, 2 bank groups with 4 banks for each bank group for ×16 DRAM. The DDR4 SDRAM uses an 8n prefetch architecture to achieve high-speed