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Under zero- or reverse-bias (the "off" state), a PIN diode has a low capacitance. The low capacitance will not pass much of an RF signal. Under a forward bias of 1 mA (the "on" state), a typical PIN diode will have an RF resistance of about 1 ohm, making it a good conductor of RF. Consequently, the PIN diode makes a good RF switch.
These characteristics are also known as I–V curves, referring to the standard symbols for current and voltage. In electronic components with more than two terminals, such as vacuum tubes and transistors, the current–voltage relationship at one pair of terminals may depend on the current or voltage on a third terminal. This is usually ...
The electrons and holes travel in opposite directions, but they also have opposite charges, so the overall current is in the same direction on both sides of the diode, as required. The Shockley diode equation models the forward-bias operational characteristics of a p–n junction outside the avalanche (reverse-biased conducting) region.
A PIN diode has a central un-doped, or intrinsic, layer, forming a p-type/intrinsic/n-type structure. [42] They are used as radio frequency switches and attenuators. They are also used as large-volume, ionizing-radiation detectors and as photodetectors. PIN diodes are also used in power electronics, as
A p–n diode is a type of semiconductor diode based upon the p–n junction. The diode conducts current in only one direction, and it is made by joining a p-type semiconducting layer to an n-type semiconducting layer. Semiconductor diodes have multiple uses including rectification of alternating current to direct current, in the detection of ...
The load line diagram at right is for a resistive load in a common emitter circuit. The load line shows how the collector load resistor (R L ) constrains the circuit voltage and current. The diagram also plots the transistor's collector current I C versus collector voltage V CE for different values of base current I base .
The Shockley diode equation, or the diode law, named after transistor co-inventor William Shockley of Bell Labs, models the exponential current–voltage (I–V) relationship of semiconductor diodes in moderate constant current forward bias or reverse bias:
The Shockley diode equation relates the diode current of a p-n junction diode to the diode voltage .This relationship is the diode I-V characteristic: = (), where is the saturation current or scale current of the diode (the magnitude of the current that flows for negative in excess of a few , typically 10 −12 A).