Search results
Results From The WOW.Com Content Network
A semiconductor detector in ionizing radiation detection physics is a device that uses a semiconductor (usually silicon or germanium) to measure the effect of incident charged particles or photons. Semiconductor detectors find broad application for radiation protection , gamma and X-ray spectrometry , and as particle detectors .
Based on device structure, photodetectors can be classified into the following categories: MSM Photodetector: A metal-semiconductor-metal (MSM) photodetector consists of a semiconductor layer sandwiched between two metal electrodes. The metal electrodes are interdigitated, forming a series of alternating fingers or grids.
2009 Nobel Prize in Physics laureates George E. Smith and Willard Boyle, 2009, photographed on a Nikon D80, which uses a CCD sensor. The basis for the CCD is the metal–oxide–semiconductor (MOS) structure, [2] with MOS capacitors being the basic building blocks of a CCD, [1] [3] and a depleted MOS structure used as the photodetector in early CCD devices.
Hybrid pixel detectors are a type of ionizing radiation detector consisting of an array of diodes based on semiconductor technology and their associated electronics. The term “hybrid” stems from the fact that the two main elements from which these devices are built, the semiconductor sensor and the readout chip (also known as application-specific integrated circuit or ASIC), are ...
A semiconductor device is an electronic component that relies on the electronic properties of a semiconductor material (primarily silicon, germanium, and gallium arsenide, as well as organic semiconductors) for its function. Its conductivity lies between conductors and insulators.
SPADs are semiconductor devices that are based on a p–n junction that is reverse-biased at an operating voltage that exceeds the junction's breakdown voltage (). [3] " At this bias, the electric field is so high [higher than 3×10 5 V/cm] that a single charge carrier injected into the depletion layer can trigger a self-sustaining avalanche.
The specific detectivity of the device was shown to be comparable to the detectivity of more established detectors at the time, such as QWIPs or HgCdTe detectors. [13] This pioneering work stimulated the search for bi-functional optoelectronic devices embedding both lasing and detection within the same photonic architecture. [14] [15] [16] [17]
Various semiconductor structures, including p-n junctions, Schottky barriers, and metal-oxide-semiconductor structures have been utilized in position-sensitive detectors. More recent hybrid structures based on PEDOT:PSS/n-Si heterojunction exhibit ultrahigh sensitivity and excellent linearity. [ 1 ]