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He is a fellow of the Institute of Electrical and Electronics Engineers (IEEE) and the Electrochemical Society. He was awarded the IEEE Education Medal in 1989. [1] [2] Streetman's academic focus is on semiconductor materials and devices. He is the co-author of Solid State Electronic Devices, along with Dr. Sanjay Banerjee, and author of over ...
Solid State Physical Electronics 2nd Ed, Aldert Van der Ziel, Publ. Prentice-Hall (1968) Noise in Measurements , Aldert Van Der Ziel, Publisher: John Wiley & Sons Inc (1976) ISBN 0-471-89895-3 Nonlinear Electronic Circuits , Aldert Van Der Ziel, Publ. John Wiley & Sons Inc (1977) ISBN 0-471-02227-6
The term solid-state became popular at the beginning of the semiconductor era in the 1960s to distinguish this new technology. A semiconductor device works by controlling an electric current consisting of electrons or holes moving within a solid crystalline piece of semiconducting material such as silicon, while the thermionic vacuum tubes it replaced worked by controlling a current of ...
Solid State Physics (2nd Edition), J.R. Hook, H.E. Hall, Manchester Physics Series, John Wiley & Sons, 2010, ISBN 978 0 471 92804 1 Ben G. Streetman, Santay Kumar Banerjee; Solid State Electronic Devices (6th Edition), Pearson International Edition; pp. 126–135.
Based on my recollection and page 328 of Ben Streetman's Solid State Electronic Devices (1972) I agree with 78.33.14.67. Jc3s5h ( talk ) 12:40, 29 October 2010 (UTC) [ reply ] "The unapproximated Ebers–Moll equations used to describe the three currents in any operating region are given below.
In solid-state physics, a metal–semiconductor (M–S) junction is a type of electrical junction in which a metal comes in close contact with a semiconductor material. It is the oldest type of practical semiconductor device. M–S junctions can either be rectifying or non-rectifying.
Molecular-beam epitaxy takes place in high vacuum or ultra-high vacuum (10 −8 –10 −12 Torr).The most important aspect of an MBE process is the deposition rate (typically less than 3,000 nm per hour) that allows the films to grow epitaxially (in layers on top of the existing crystal).
Hess is concerned with solid-state physics and the fundamentals of quantum mechanics. He is recognized as an expert in electron transport, semiconductor physics, supercomputing, and nanostructures. [5] A leader in simulating the nature and movement of electrons with computer models, [1] Hess is considered a founder of computational electronics. [6]