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Glass etching, or "French embossing", is a popular technique developed during the mid-1800s that is still widely used in both residential and commercial spaces today. Glass etching comprises the techniques of creating art on the surface of glass by applying acidic, caustic, or abrasive substances.
Hydrofluoric acid is a solution of hydrogen fluoride (HF) in water.Solutions of HF are colorless, acidic and highly corrosive.A common concentration is 49% (48-52%) but there are also stronger solutions (e.g. 70%) and pure HF has a boiling point near room temperature.
Buffered oxide etch is commonly used for more controllable etching. [1] Buffering HF with NH 4 F results in a solution with a more stable pH; thus, more stable concentrations of HF and HF − 2, and a more stable etch rate. [2] Some oxides produce insoluble products in HF solutions.
Etching tanks used to perform Piranha, hydrofluoric acid or RCA clean on 4-inch wafer batches at LAAS technological facility in Toulouse, France. Etching is used in microfabrication to chemically remove layers from the surface of a wafer during manufacturing. Etching is a critically important process module in fabrication, and every wafer ...
Significant direct uses of HF include pickling (cleaning) of steel, cracking of alkanes in the petrochemical industry, and etching of glass. [5] Aluminium smelting process: cryolite (a fluoride) is required to dissolve aluminum oxide.
Photosensitive glass vase. Photosensitive glass, also called photostructurable glass (PSG) or photomachinable glass, is a glass in the lithium-silicate family of glasses onto which images can be etched using shortwave radiations, such as ultraviolet. [1] Photosensitive glass was first discovered by S. Donald Stookey in 1937. [2] [3] [4]
Ammonium bifluoride is a component of some etchants. It attacks silica component of glass: SiO 2 + 4 [NH 4][HF 2] → SiF 4 + 4 [NH 4]F + 2 H 2 O. Potassium bifluoride is a related more commonly used etchant. Ammonium bifluoride has been considered as an intermediate in the production of hydrofluoric acid from hexafluorosilicic acid.
The optional second step (for bare silicon wafers) is a short immersion in a 1:100 or 1:50 solution of aqueous HF (hydrofluoric acid) at 25 °C for about fifteen seconds, in order to remove the thin oxide layer and some fraction of ionic contaminants. If this step is performed without ultra high purity materials and ultra clean containers, it ...