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With the introduction of high κ metal gates, a new degradation mechanism has become more important, referred to as PBTI (for positive bias temperature instabilities), which affects nMOS transistor when positively biased. In this case, no interface states are generated and 100% of the Vth degradation may be recovered.
ESL Models and Their Application: Electronic System Level Design and Verification in Practice. Springer. ISBN 978-1-4419-0964-0. Frank Rogin; Rolf Drechsler (2010). Debugging at the Electronic System Level. Springer. ISBN 978-90-481-9254-0. Liming Xiu (2007). VLSI circuit design methodology demystified: a conceptual taxonomy. Wiley-IEEE.
An application-specific instruction set processor (ASIP) is a component used in system on a chip design. The instruction set architecture of an ASIP is tailored to benefit a specific application. This specialization of the core provides a tradeoff between the flexibility of a general purpose central processing unit (CPU) and the performance of ...
[2] Certain semiconductor fabrication technologies also include deep trench isolation , a related feature often found in analog integrated circuits . The effect of the trench edge has given rise to what has recently been termed the "reverse narrow channel effect" [ 3 ] or "inverse narrow width effect". [ 4 ]
MOSFET, showing gate (G), body (B), source (S), and drain (D) terminals. The gate is separated from the body by an insulating layer (pink).. The MOSFET (metal–oxide–semiconductor field-effect transistor) [1] is a type of insulated-gate field-effect transistor (IGFET) that is fabricated by the controlled oxidation of a semiconductor, typically silicon.
A double-gate FinFET device. A fin field-effect transistor (FinFET) is a multigate device, a MOSFET (metal–oxide–semiconductor field-effect transistor) built on a substrate where the gate is placed on two, three, or four sides of the channel or wrapped around the channel (gate all around), forming a double or even multi gate structure.
Time-dependent gate oxide breakdown (or time-dependent dielectric breakdown, TDDB) is a kind of transistor aging, a failure mechanism in MOSFETs, when the gate oxide breaks down as a result of long-time application of relatively low electric field (as opposed to immediate breakdown, which is caused by strong electric field).
Integrated injection logic (IIL, I 2 L, or I2L) is a class of digital circuits built with multiple collector bipolar junction transistors (BJT). [1] When introduced it had speed comparable to TTL yet was almost as low power as CMOS , making it ideal for use in VLSI (and larger) integrated circuits .