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These locations can become vulnerable to more than one soft error, while scrubbing ensures the checking of the whole memory within a guaranteed time. On some systems, not only the main memory (DRAM-based) is capable of scrubbing but also the CPU caches (SRAM-based). On most systems the scrubbing rates for both can be set independently.
Memory cells that use fewer than four transistors are possible; however, such 3T [27] [28] or 1T cells are DRAM, not SRAM (even the so-called 1T-SRAM). Access to the cell is enabled by the word line (WL in figure) which controls the two access transistors M 5 and M 6 in 6T SRAM figure (or M 3 and M 4 in 4T SRAM figure) which, in turn, control ...
The only current memory technology that easily competes with MRAM in terms of performance at comparable density is static random-access memory (SRAM). SRAM consists of a series of transistors arranged in a flip-flop, which will hold one of two states as long as power is applied. Since the transistors have a very low power requirement, their ...
Thus, accessing data stored in DRAM causes memory cells to leak their charges and interact electrically, as a result of high cells density in modern memory, altering the content of nearby memory rows that actually were not addressed in the original memory access. [10]
The BIOS in some computers, when matched with operating systems such as some versions of Linux, BSD, and Windows (Windows 2000 and later [13]), allows counting of detected and corrected memory errors, in part to help identify failing memory modules before the problem becomes catastrophic.
RAM drives use normal system memory as if it were a partition on a physical hard drive rather than accessing the data bus normally used for secondary storage. Though RAM drives can often be supported directly in the operating system via special mechanisms in the OS kernel, it is generally simpler to access a RAM drive through a virtual device ...
Static random-access memory (SRAM) is electronic memory that does not require refreshing. [2] An SRAM memory cell requires four to six transistors, compared to a single transistor and a capacitor for DRAM; therefore, SRAM circuits require more area on a chip. As a result, data density is much lower in SRAM chips than in DRAM, and gives SRAM a ...
The memory is divided into several equally sized but independent sections called banks, allowing the device to operate on a memory access command in each bank simultaneously and speed up access in an interleaved fashion. This allows SDRAMs to achieve greater concurrency and higher data transfer rates than asynchronous DRAMs could.