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For contributions to III-V semiconductor materials and device technology, particularly for advancing the indium-phosphide, metal-insulator-semiconductor field-effect-transistor technology 1989: Krishna Saraswat: For contributions to metallization and interconnects for VLSI. 1989: Rudy Van De Plassche
Category: Semiconductor journals. ... This list may not reflect recent changes. I. ... Journal of Micro/Nanopatterning, Materials, and Metrology ...
Journal of Electronic Materials; Journal of the European Ceramic Society; Journal of Functional Biomaterials; Journal of Industrial Textiles; Journal of Intelligent Material Systems and Structures; Journal of Materials Chemistry - A, B, and C; Journal of Materials Processing Technology; Journal of Materials Research; Journal of Materials ...
This is a list of emerging technologies, which are in-development technical innovations that have significant potential in their applications. The criteria for this list is that the technology must: Exist in some way; purely hypothetical technologies cannot be considered emerging and should be covered in the list of hypothetical technologies ...
For several years, the Semiconductor Industry Association (SIA) gave this responsibility of coordination to the United States, which led to the creation of an American style roadmap, the National Technology Roadmap for Semiconductors (NTRS). [5] The first semiconductor roadmap, published by the SIA in 1993.
Tin sulfide (SnS) is a semiconductor with direct optical band gap of 1.3 eV and absorption coefficient above 10 4 cm −1 for photon energies above 1.3 eV. It is a p-type semiconductor whose electrical properties can be tailored by doping and structural modification and has emerged as one of the simple, non-toxic and affordable material for ...
Semiconductor Science and Technology is a peer-reviewed scientific journal covering all applied or explicitly applicable experimental and theoretical studies of the properties of semiconductors and their interfaces, devices, and packaging. The journal publishes different article types including research papers, rapid communications, and topical ...
Oxide thickness [1] MOSFET logic Researcher(s) Organization Ref; June 1960: 20,000 nm: 100 nm: PMOS: Mohamed M. Atalla, Dawon Kahng: Bell Telephone Laboratories [2] [3] NMOS: 10,000 nm: 100 nm: PMOS Mohamed M. Atalla, Dawon Kahng: Bell Telephone Laboratories [4] NMOS May 1965: 8,000 nm 150 nm: NMOS Chih-Tang Sah, Otto Leistiko, A.S. Grove ...