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Under the functional failure mode approach, the actual functional failure modes of the product are identified during a DFMEA. During the detailed FMEDA, each component failure mode is mapped to a functional failure mode. The functional failure modes are then categorized according to product failure mode in a particular application. [13]
Failure mode and effects analysis (FMEA; often written with "failure modes" in plural) is the process of reviewing as many components, assemblies, and subsystems as possible to identify potential failure modes in a system and their causes and effects. For each component, the failure modes and their resulting effects on the rest of the system ...
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A thermocouple, also known as a "thermoelectrical thermometer", is an electrical device consisting of two dissimilar electrical conductors forming an electrical junction. A thermocouple produces a temperature-dependent voltage as a result of the Seebeck effect, and this voltage can be interpreted to measure temperature.
The failure mode may then be charted on a criticality matrix using severity code as one axis and probability level code as the other. For quantitative assessment, modal criticality number is calculated for each failure mode of each item, and item criticality number is calculated for each item. The criticality numbers are computed using the ...
The Common Mode Analysis (CMA) looks at the redundant critical components to find failure modes which can cause all to fail at about the same time. Software is always included in this analysis as well as looking for manufacturing errors or "bad lot" components. A failure such as a bad resistor in all flight control computers would be addressed ...
The best place to start is with the failure mode. This is based on the assumption that there is a particular failure mode, or range of modes, that may occur within a product. It is therefore reasonable to assume that the bond test should replicate the mode, or modes of interest. However, exact replication is not always possible.
Time-dependent gate oxide breakdown (or time-dependent dielectric breakdown, TDDB) is a kind of transistor aging, a failure mechanism in MOSFETs, when the gate oxide breaks down as a result of long-time application of relatively low electric field (as opposed to immediate breakdown, which is caused by strong electric field).