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The model is abstract, not based on a specific physical model, but flexibly describes the failure rate dependence on the temperature, the electrical stress, and the specific technology and materials. More adequately described as descriptive than prescriptive, the values for A , n , and Q are found by fitting the model to experimental data.
Stress migration is a failure mechanism that often occurs in integrated circuit metallization (aluminum, copper). Voids form as result of vacancy migration driven by the hydrostatic stress gradient. Large voids may lead to open circuit or unacceptable resistance increase that impedes the IC performance.
eFuses can be made out of silicon or metal traces. In both cases, they work (blow) by electromigration, the phenomenon where electric flow causes the conductor material to move. Although electromigration is generally undesired in chip design as it causes failures, eFuses are made of weak traces that are designed to fail before others do. [3] [4]
For solder joints (SnPb or SnAgCu lead-free) used in IC chips, however, electromigration occurs at much lower current densities, e.g. 10 4 A/cm 2. It causes a net atom transport along the direction of electron flow. The atoms accumulate at the anode, while voids are generated at the cathode and back stress is induced during electromigration.
The Nernst–Planck equation is a conservation of mass equation used to describe the motion of a charged chemical species in a fluid medium. It extends Fick's law of diffusion for the case where the diffusing particles are also moved with respect to the fluid by electrostatic forces.
In organometallic chemistry, a migratory insertion is a type of reaction wherein two ligands on a metal complex combine. It is a subset of reactions that very closely resembles the insertion reactions, and both are differentiated by the mechanism that leads to the resulting stereochemistry of the products.
Feedback-controlled electromigration (FCE) is an experimental technique to investigate the phenomenon known as electromigration. By controlling the voltage applied as the conductance varies it is possible to keep the voltage at a critical level for electromigration .
Grain boundary sliding (GBS) is a material deformation mechanism where grains slide against each other. This occurs in polycrystalline material under external stress at high homologous temperature (above ~0.4 [1]) and low strain rate and is intertwined with creep.