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As PC Cards (was PCMCIA), Linear Flash cards should have a Card Information Structure (CIS). However, many memory cards do not have a CIS. However, many memory cards do not have a CIS. Linear Flash cards begin to develop bad blocks after about 100,000 erase/write cycles and thus are of dubious value on the second-hand market.
Thyristor RAM (T-RAM) is a type of random-access memory dating from 2009 invented and developed by T-RAM Semiconductor, which departs from the usual designs of memory cells, combining the strengths of the DRAM and SRAM: high density and high speed.
Memory cells that use fewer than four transistors are possible; however, such 3T [27] [28] or 1T cells are DRAM, not SRAM (even the so-called 1T-SRAM). Access to the cell is enabled by the word line (WL in figure) which controls the two access transistors M 5 and M 6 in 6T SRAM figure (or M 3 and M 4 in 4T SRAM figure) which, in turn, control ...
The Miniature Card is 37 × 45 × 3.5 mm thick and can have devices on both sides of the substrate. Its 60-pin connector was a memory-only subset of PCMCIA and featured 16-bit data and 24-bit address bus with 3.3 or 5-volt signaling. Miniature Cards support Attribute Information Structure (AIS) in the I²C identification EEPROM.
The only current memory technology that easily competes with MRAM in terms of performance at comparable density is static random-access memory (SRAM). SRAM consists of a series of transistors arranged in a flip-flop, which will hold one of two states as long as power is applied. Since the transistors have a very low power requirement, their ...
In SRAM, the memory cell is a type of flip-flop circuit, usually implemented using FETs. This means that SRAM requires very low power when not being accessed, but it is expensive and has low storage density. A second type, DRAM, is based around a capacitor. Charging and discharging this capacitor can store a "1" or a "0" in the cell.
Memory scrubbing consists of reading from each computer memory location, correcting bit errors (if any) with an error-correcting code , and writing the corrected data back to the same location. [ 1 ] Due to the high integration density of modern computer memory chips , the individual memory cell structures became small enough to be vulnerable ...
The SRAM memory cell is a type of flip-flop circuit, typically implemented using MOSFETs. These require very low power to maintain the stored value when not being accessed. A second type, DRAM (dynamic RAM), is based on MOS capacitors. Charging and discharging a capacitor can store either a '1' or a '0' in the cell.