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The first single-chip memory IC was the BJT 16-bit IBM SP95 fabricated in December 1965, engineered by Paul Castrucci. [9] [10] While bipolar memory offered improved performance over magnetic-core memory, it could not compete with the lower price of magnetic-core memory, which remained dominant up until the late 1960s. [9] Bipolar memory failed ...
This led to his development of a single-transistor DRAM memory cell. [20] In 1967, Dennard filed a patent for a single-transistor DRAM memory cell, based on MOS technology. [21] The first commercial bipolar 64-bit SRAM was released by Intel in 1969 with the 3101 Schottky TTL.
Bipolar transistors, and particularly power transistors, have long base-storage times when they are driven into saturation; the base storage limits turn-off time in switching applications. A Baker clamp can prevent the transistor from heavily saturating, which reduces the amount of charge stored in the base and thus improves switching time.
In April 1969, Intel Inc. introduced its first product, Intel 3101, a SRAM memory chip intended to replace bulky magnetic-core memory modules; Its capacity was 64 bits [a] [7] and was based on bipolar junction transistors. [8] It was designed by using rubylith. [9]
A typical PROM device is made up of an array of memory cells, each made up of a transistor, which is a bipolar transistor, connected to a fuse called a polyfuse in the emitter of the transistor. A PROM programmer is used to blow the polyfuse, programming the PROM. [1]
Due to internal parasitic capacitance in transistors, higher currents sourced into the base of the inverter transistor result in faster switching speeds, and since the voltage difference between high and low logic levels is smaller for I2L than other bipolar logic families (around 0.5 volts instead of around 3.3 or 5 volts), losses due to ...
Bipolar transistors offer high speed, high gain, and low output impedance with relatively high power consumption per device, which are excellent properties for high-frequency analog amplifiers including low noise radio frequency (RF) amplifiers that only use a few active devices, while CMOS technology offers high input impedance and is ...
Integrated bipolar static random-access memory (SRAM) was invented by Robert H. Norman at Fairchild Semiconductor in 1963. [17] It was followed by the development of MOS SRAM by John Schmidt at Fairchild in 1964. [10] SRAM became an alternative to magnetic-core memory, but required six MOS transistors for each bit of data. [18]