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Static random-access memory (static RAM or SRAM) is a type of random-access memory (RAM) that uses latching circuitry (flip-flop) to store each bit. SRAM is volatile memory; data is lost when power is removed. The static qualifier differentiates SRAM from dynamic random-access memory (DRAM):
In SRAM, the memory cell is a type of flip-flop circuit, usually implemented using FETs. This means that SRAM requires very low power when not being accessed, but it is expensive and has low storage density. A second type, DRAM, is based around a capacitor. Charging and discharging this capacitor can store a "1" or a "0" in the cell.
The Miniature Card is 37 × 45 × 3.5 mm thick and can have devices on both sides of the substrate. Its 60-pin connector was a memory-only subset of PCMCIA and featured 16-bit data and 24-bit address bus with 3.3 or 5-volt signaling. Miniature Cards support Attribute Information Structure (AIS) in the I²C identification EEPROM.
The two main types of volatile RAM are static random-access memory (SRAM) and dynamic random-access memory (DRAM). Bipolar SRAM was invented by Robert Norman at Fairchild Semiconductor in 1963, [9] followed by the development of MOS SRAM by John Schmidt at Fairchild in 1964. [15]
CMOS memory was commercialized by RCA, which launched a 288-bit CMOS SRAM memory chip in 1968. [23] CMOS memory was initially slower than NMOS memory, which was more widely used by computers in the 1970s. [24] In 1978, Hitachi introduced the twin-well CMOS process, with its HM6147 (4 kb SRAM) memory chip, manufactured with a 3 μm process. The ...
The basis for memory card technology is flash memory. [2] It was invented by Fujio Masuoka at Toshiba in 1980 [3] [4] and commercialized by Toshiba in 1987. [5] [6] The development of memory cards was driven in the 1980s by the need for an alternative to floppy disk drives that had lower power consumption, had less weight and occupied less ...